| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP240N60E-GE3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
159 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 795 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFBC30APBFMOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix |
906 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHP22N60AE-BE3N-CHANNEL 600V Vishay Siliconix |
1,944 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF640STRRPBFMOSFET N-CH 200V 18A TO263 Vishay Siliconix |
1,458 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRFZ48PBFMOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
978 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFZ48RPBFMOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
948 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF740ALPBFMOSFET N-CH 400V 10A I2PAK Vishay Siliconix |
615 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRF740ASTRLPBFMOSFET N-CH 400V 10A D2PAK Vishay Siliconix |
550 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHH240N60E-T1-GE3MOSFET N-CH 600V 12A PPAK 8 X 8 Vishay Siliconix |
2,736 | - |
|
数据手册 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 783 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
IRF9Z34STRRPBFMOSFET P-CH 60V 18A D2PAK Vishay Siliconix |
361 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

