电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFSL9N60APBFMOSFET N-CH 600V 9.2A I2PAK Vishay Siliconix |
900 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
SIHP21N80AEF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
980 | - |
|
数据手册 |
EF | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16.3A (Tc) | 10V | 250mOhm @ 8.5A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±30V | 1511 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SUM10250E-GE3MOSFET N-CH 250V 63.5A D2PAK Vishay Siliconix |
790 | - |
|
数据手册 |
ThunderFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 63.5A (Tc) | 7.5V, 10V | 31mOhm @ 30A, 10V | 4V @ 250µA | 88 nC @ 10 V | ±20V | 3002 pF @ 125 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFS11N50ATRLPMOSFET N-CH 500V 11A TO263AB Vishay Siliconix |
325 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
|
SIHG15N80AE-GE3MOSFET N-CH 800V 13A TO247AC Vishay Siliconix |
400 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1093 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG15N80AEF-GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
438 | - |
|
数据手册 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 350mOhm @ 6.5A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±30V | 1128 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHF15N60E-GE3MOSFET N-CH 600V 15A TO220 Vishay Siliconix |
779 | - |
|
数据手册 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SIHB15N60E-GE3MOSFET N-CH 600V 15A D2PAK Vishay Siliconix |
1,347 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI7192DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
2,895 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 5800 pF @ 15 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHG17N80AEF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
294 | - |
|
数据手册 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 305mOhm @ 8.5A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±30V | 1300 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
