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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHF12N65E-GE3MOSFET N-CH 650V 12A TO220 Vishay Siliconix |
993 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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IRF840ASTRLPBFMOSFET N-CH 500V 8A D2PAK Vishay Siliconix |
675 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIDR104ADP-T1-RE3MOSFET N-CH 100V 18.8A/81A PPAK Vishay Siliconix |
5,920 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18.8A (Ta), 81A (Tc) | 7.5V, 10V | 6.1mOhm @ 15A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 3250 pF @ 50 V | - | 5.4W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
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SIHA15N80AE-GE3MOSFET N-CH 800V 6A TO220 Vishay Siliconix |
973 | - |
|
数据手册 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1093 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIDR608EP-T1-RE3N-CHANNEL 45 V (D-S) 175C MOSFET Vishay Siliconix |
5,990 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 56A (Ta), 228A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167 nC @ 10 V | +20V, -16V | 8900 pF @ 20 V | - | 7.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
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SIDR140DP-T1-RE3N-CHANNEL 25-V (D-S) MOSFET Vishay Siliconix |
2,998 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 79A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250µA | 170 nC @ 10 V | +20V, -16V | 8150 pF @ 10 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
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SIHP12N60E-BE3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
346 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | - | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SQJQ148ER-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
1,641 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 372A (Tc) | 10V | 1.5mOhm @ 20A, 10V | 3.5V @ 250µA | 102 nC @ 10 V | ±20V | 5750 pF @ 25 V | - | 394W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 |
|
IRFIBC20GPBFMOSFET N-CH 600V 1.7A TO220-3 Vishay Siliconix |
1,045 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.7A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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SIHG11N80AE-GE3MOSFET N-CH 800V 8A TO247AC Vishay Siliconix |
480 | - |
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数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
