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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFI730GPBFMOSFET N-CH 400V 3.7A TO220-3 Vishay Siliconix |
1,105 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.7A (Tc) | 10V | 1Ohm @ 2.1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRF9520STRLPBFMOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix |
1,368 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIR140DP-T1-RE3MOSFET N-CH 25V 71.9A/100A PPAK Vishay Siliconix |
11,100 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 71.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250µA | 170 nC @ 10 V | +20V, -16V | 8150 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SUD35N10-26P-BE3MOSFET N-CH 100V 12A/35A DPAK Vishay Siliconix |
1,504 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Ta), 35A (Tc) | 7V, 10V | 26mOhm @ 12A, 10V | 4.4V @ 250µA | 47 nC @ 10 V | ±20V | 2000 pF @ 12 V | - | 8.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRFBC40PBF-BE3MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix |
1,018 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | - | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHJ8N60E-T1-GE3MOSFET N-CH 600V 8A PPAK SO-8 Vishay Siliconix |
2,881 | - |
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数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 520mOhm @ 4A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 754 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFBC30ASPBFMOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix |
2,169 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SQJQ150E-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
1,960 | - |
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数据手册 |
TrenchFET® | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 233A (Tc) | 10V | 1.9mOhm @ 20A, 10V | 3.5V @ 250µA | 92 nC @ 10 V | ±20V | 4643 pF @ 25 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 |
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IRF830SPBFMOSFET N-CH 500V 4.5A D2PAK Vishay Siliconix |
1,078 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIDR638DP-T1-RE3N-CHANNEL 40-V (D-S) MOSFET Vishay Siliconix |
12,000 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204 nC @ 10 V | +20V, -16V | 10500 pF @ 20 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
