电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHA17N80AE-GE3MOSFET N-CH 800V 7A TO220 Vishay Siliconix |
1,000 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 1260 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SI4456DY-T1-E3MOSFET N-CH 40V 33A 8SO Vishay Siliconix |
2,475 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 33A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5670 pF @ 20 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRFZ44RPBF-BE3MOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
254 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 28mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
SIHP17N80AE-GE3MOSFET N-CH 800V 15A TO220AB Vishay Siliconix |
899 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 1260 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFBE30LPBFMOSFET N-CH 800V 4.1A I2PAK Vishay Siliconix |
988 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRF840STRRPBFMOSFET N-CH 500V 8A D2PAK Vishay Siliconix |
691 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHJ240N60E-T1-GE3MOSFET N-CH 600V 12A PPAK SO-8 Vishay Siliconix |
1,100 | - |
|
数据手册 |
E | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 783 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SIHP21N80AE-GE3MOSFET N-CH 800V 17.4A TO220AB Vishay Siliconix |
976 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHP17N80AEF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
928 | - |
|
数据手册 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 305mOhm @ 8.5A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±30V | 1300 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRF540STRRPBFMOSFET N-CH 100V 28A D2PAK Vishay Siliconix |
1,476 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
