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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2N6660JTXP02MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix |
4,383 | - |
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数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
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2N6661JTX02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
4,689 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
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2N6661JTXP02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
2,473 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
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2N6661JTVP02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
4,205 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
SI7454DP-T1-E3MOSFET N-CH 100V 5A PPAK SO-8 Vishay Siliconix |
6,664 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5A (Ta) | 6V, 10V | 34mOhm @ 7.8A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRF510MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix |
4,208 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF9510MOSFET P-CH 100V 4A TO220AB Vishay Siliconix |
6,857 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF840MOSFET N-CH 500V 8A TO220AB Vishay Siliconix |
3,663 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFD110MOSFET N-CH 100V 1A 4DIP Vishay Siliconix |
3,745 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD9113MOSFET P-CH 60V 600MA 4DIP Vishay Siliconix |
5,738 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 600mA (Ta) | - | 1.6Ohm @ 300mA, 10V | - | 15 nC @ 15 V | - | 250 pF @ 25 V | - | - | - | - | - | Through Hole | 4-HVMDIP |
