| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9540MOSFET P-CH 100V 19A TO220AB Vishay Siliconix |
4,661 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFP350MOSFET N-CH 400V 16A TO247-3 Vishay Siliconix |
5,809 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRL530MOSFET N-CH 100V 15A TO220AB Vishay Siliconix |
5,063 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4V, 5V | 160mOhm @ 9A, 5V | 2V @ 250µA | 28 nC @ 5 V | ±10V | 930 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRLD120MOSFET N-CH 100V 1.3A 4DIP Vishay Siliconix |
5,887 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.3A (Ta) | 4V, 5V | 270mOhm @ 780mA, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
IRLD014MOSFET N-CH 60V 1.7A 4DIP Vishay Siliconix |
4,249 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.7A (Ta) | 4V, 5V | 200mOhm @ 1A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRL540MOSFET N-CH 100V 28A TO220AB Vishay Siliconix |
9,586 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL520MOSFET N-CH 100V 9.2A TO220AB Vishay Siliconix |
9,181 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL510MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix |
7,147 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 4V, 5V | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1 nC @ 5 V | ±10V | 250 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRLZ34MOSFET N-CH 60V 30A TO220AB Vishay Siliconix |
6,192 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35 nC @ 5 V | ±10V | 1600 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRLD024MOSFET N-CH 60V 2.5A 4DIP Vishay Siliconix |
7,519 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.5A (Ta) | 4V, 5V | 100mOhm @ 1.5A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |

