| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VP0808BMOSFET P-CH 80V 880MA TO39 Vishay Siliconix |
6,564 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80 V | 880mA (Ta) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 6.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
VP0808B-E3MOSFET P-CH 80V 880MA TO39 Vishay Siliconix |
4,859 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80 V | 880mA (Ta) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 6.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
VP1008BMOSFET P-CH 100V 790MA TO39 Vishay Siliconix |
2,602 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 790mA (Ta) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 6.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
2N6660-2MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix |
2,173 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
|
VQ1004PMOSFET N-CH 60V 0.4A TO-205 Vishay Siliconix |
9,841 | - |
|
数据手册 |
- | - | Tube | Obsolete | - | - | - | 830mA (Ta) | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
VQ1004P-E3MOSFET N-CH 60V 0.4A TO-205 Vishay Siliconix |
2,214 | - |
|
数据手册 |
- | - | Tube | Obsolete | - | - | - | 830mA (Ta) | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
2N6661-2MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
3,346 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
VP0808B-2MOSFET P-CH 80V 880MA TO39 Vishay Siliconix |
8,818 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80 V | 880mA (Ta) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 6.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
VQ1004P-2MOSFET N-CH 60V 0.4A TO-205 Vishay Siliconix |
8,054 | - |
|
数据手册 |
- | - | Tube | Obsolete | - | - | - | - | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
2N6660JTVP02MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix |
2,002 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |

