| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHG73N60AEL-GE3MOSFET N-CH 600V 69A TO247AC Vishay Siliconix |
3,151 | - |
|
数据手册 |
EL | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 69A (Tc) | 10V | 42mOhm @ 36.5A, 10V | 4V @ 250µA | 342 nC @ 10 V | ±30V | 6709 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHH21N65E-T1-GE3MOSFET N-CH 650V 20.3A PPAK 8X8 Vishay Siliconix |
4,114 | - |
|
数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.3A (Tc) | 10V | 170mOhm @ 11A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±30V | 2404 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
SIHH21N65EF-T1-GE3MOSFET N-CH 650V 19.8A PPAK 8X8 Vishay Siliconix |
6,546 | - |
|
数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19.8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 102 nC @ 10 V | ±30V | 2396 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
IRFPC50LCMOSFET N-CH 600V 11A TO247-3 Vishay Siliconix |
6,319 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG61N65EF-GE3MOSFET N-CH 650V 64A TO247AC Vishay Siliconix |
7,304 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHW61N65EF-GE3MOSFET N-CH 650V 64A TO247AD Vishay Siliconix |
3,037 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
IRFP350LCMOSFET N-CH 400V 16A TO247-3 Vishay Siliconix |
6,441 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHH26N60EF-T1-GE3MOSFET N-CH 600V 24A PPAK 8 X 8 Vishay Siliconix |
9,688 | - |
|
数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 141mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2744 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
SIHH100N60E-T1-GE3MOSFET N-CH 600V 28A PPAK 8 X 8 Vishay Siliconix |
7,424 | - |
|
数据手册 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 100mOhm @ 13.5A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1850 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
IRFPC48MOSFET N-CH 600V 8.9A TO247-3 Vishay Siliconix |
6,809 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.9A (Tc) | 10V | 820mOhm @ 5.3A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |

