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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SUM110N04-2M1P-E3MOSFET N-CH 40V 29A/110A TO263 Vishay Siliconix |
2,734 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Ta), 110A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 360 nC @ 10 V | ±20V | 18800 pF @ 20 V | - | 3.13W (Ta), 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHW47N60EF-GE3MOSFET N-CH 600V 47A TO247AD Vishay Siliconix |
7,153 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 225 nC @ 10 V | ±30V | 4854 pF @ 100 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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SIHW73N60E-GE3MOSFET N-CH 600V 73A TO247AD Vishay Siliconix |
5,298 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±20V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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SI4864DY-T1-GE3MOSFET N-CH 20V 17A 8SO Vishay Siliconix |
7,007 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 17A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 25A, 4.5V | 2V @ 250µA | 70 nC @ 4.5 V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SQM200N04-1M1L_GE3MOSFET N-CH 40V 200A TO263-7 Vishay Siliconix |
8,224 | - |
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数据手册 |
TrenchFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.5V @ 250µA | 413 nC @ 10 V | ±20V | 20655 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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IRFPS29N60LPBFMOSFET N-CH 600V 29A SUPER247 Vishay Siliconix |
8,139 | - |
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数据手册 |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 250µA | 220 nC @ 10 V | ±30V | 6160 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
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IRFPF30MOSFET N-CH 900V 3.6A TO247-3 Vishay Siliconix |
8,337 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHH21N60E-T1-GE3MOSFET N-CH 600V 20A PPAK 8 X 8 Vishay Siliconix |
2,099 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 83 nC @ 10 V | ±30V | 2015 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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IRFPG30MOSFET N-CH 1000V 3.1A TO247-3 Vishay Siliconix |
6,836 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHH11N65E-T1-GE3MOSFET N-CH 650V 12A PPAK 8 X 8 Vishay Siliconix |
6,942 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 363mOhm @ 6A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±30V | 1257 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
