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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI4398DY-T1-E3MOSFET N-CH 20V 19A 8SO Vishay Siliconix |
8,492 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 19A (Ta) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 3V @ 250µA | 50 nC @ 4.5 V | ±20V | 5620 pF @ 10 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRFIB6N60AMOSFET N-CH 600V 5.5A TO220-3 Vishay Siliconix |
9,988 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 750mOhm @ 3.3A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRFIB7N50AMOSFET N-CH 500V 6.6A TO220-3 Vishay Siliconix |
7,170 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.6A (Tc) | 10V | 520mOhm @ 4A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SUM110N06-3M4L-E3MOSFET N-CH 60V 110A TO263 Vishay Siliconix |
5,881 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 3V @ 250µA | 300 nC @ 10 V | ±20V | 12900 pF @ 25 V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM36N20-54P-E3MOSFET N-CH 200V 36A TO263 Vishay Siliconix |
9,707 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 36A (Tc) | 10V, 15V | 53mOhm @ 20A, 15V | 4.5V @ 250µA | 127 nC @ 15 V | ±25V | 3100 pF @ 25 V | - | 3.12W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFPS35N50LPBFMOSFET N-CH 500V 34A SUPER247 Vishay Siliconix |
6,824 | - |
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数据手册 |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 34A (Tc) | 10V | 145mOhm @ 20A, 10V | 5V @ 250µA | 230 nC @ 10 V | ±30V | 5580 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
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SIHH14N60E-T1-GE3MOSFET N-CH 600V 16A PPAK 8 X 8 Vishay Siliconix |
2,759 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 255mOhm @ 7A, 10V | 4V @ 250µA | 82 nC @ 10 V | ±30V | 1416 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
IRFBC40LCMOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix |
3,581 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF644STRLPBFMOSFET N-CH 250V 14A D2PAK Vishay Siliconix |
3,253 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFBC40ASMOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix |
5,272 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
