| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFBC40SMOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix |
8,742 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFPF40MOSFET N-CH 900V 4.7A TO247-3 Vishay Siliconix |
9,894 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 4.7A (Tc) | 10V | 2.5Ohm @ 2.8A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRFBC40LMOSFET N-CH 600V 6.2A I2PAK Vishay Siliconix |
5,245 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRFBC40STRLMOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix |
2,542 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFIBC40GLCMOSFET N-CH 600V 3.5A TO220-3 Vishay Siliconix |
6,182 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SIHG32N50D-GE3MOSFET N-CH 500V 30A TO247AC Vishay Siliconix |
5,419 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 96 nC @ 10 V | ±30V | 2550 pF @ 100 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG47N60AEL-GE3MOSFET N-CH 600V 47A TO247AC Vishay Siliconix |
9,352 | - |
|
数据手册 |
EL | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 65mOhm @ 23.5A, 10V | 4V @ 250µA | 222 nC @ 10 V | ±30V | 4600 pF @ 100 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
IRFPS30N60KPBFMOSFET N-CH 600V 30A SUPER247 Vishay Siliconix |
9,691 | - |
|
数据手册 |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 250µA | 220 nC @ 10 V | ±30V | 5870 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
SIHG44N65EF-GE3MOSFET N-CH 650V 46A TO247AC Vishay Siliconix |
9,392 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 278 nC @ 10 V | ±30V | 5892 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SUM110N04-05H-E3MOSFET N-CH 40V 110A TO263 Vishay Siliconix |
7,733 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 5.3mOhm @ 30A, 10V | 5V @ 250µA | 95 nC @ 10 V | ±20V | 6700 pF @ 25 V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

