电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9640STRLMOSFET P-CH 200V 11A D2PAK Vishay Siliconix |
9,639 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRF9640STRRMOSFET P-CH 200V 11A D2PAK Vishay Siliconix |
6,789 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFP21N60LPBFMOSFET N-CH 600V 21A TO247-3 Vishay Siliconix |
8,346 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 320mOhm @ 13A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 4000 pF @ 25 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIE812DF-T1-GE3MOSFET N-CH 40V 60A 10POLARPAK Vishay Siliconix |
7,744 | - |
|
数据手册 |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.6mOhm @ 25A, 10V | 3V @ 250µA | 170 nC @ 10 V | ±20V | 8300 pF @ 20 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
|
IRFB13N50AMOSFET N-CH 500V 14A TO220AB Vishay Siliconix |
2,729 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 450mOhm @ 8.4A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±30V | 1910 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRL540STRLPBFMOSFET N-CH 100V 28A D2PAK Vishay Siliconix |
2,456 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRF740STRRPBFMOSFET N-CH 400V 10A D2PAK Vishay Siliconix |
6,196 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRFBF30SMOSFET N-CH 900V 3.6A D2PAK Vishay Siliconix |
2,396 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRFB9N65APBFMOSFET N-CH 650V 8.5A TO220AB Vishay Siliconix |
1,953 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.5A (Tc) | 10V | 930mOhm @ 5.1A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 1417 pF @ 25 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
SIE808DF-T1-E3MOSFET N-CH 20V 60A 10POLARPAK Vishay Siliconix |
3,517 | - |
|
数据手册 |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 3V @ 250µA | 155 nC @ 10 V | ±20V | 8800 pF @ 10 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
