电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK4A60D(STA4,Q,M)MOSFET N-CH 600V 4A TO220SIS Toshiba Semiconductor and Storage |
5,662 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPCC8003-H(TE12LQMMOSFET N-CH 30V 13A 8TSON Toshiba Semiconductor and Storage |
9,245 | - |
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数据手册 |
U-MOSVI-H | 8-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1300 pF @ 10 V | - | 700mW (Ta), 22W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TPCC8008(TE12L,QM)MOSFET N-CH 30V 25A 8TSON Toshiba Semiconductor and Storage |
3,239 | - |
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数据手册 |
U-MOSIV | 8-VDFN Exposed Pad | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta) | 4.5V, 10V | 6.8mOhm @ 12.5A, 10V | 2.5V @ 1A | 30 nC @ 10 V | ±25V | 1600 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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SSM3J108TU(TE85L)MOSFET P-CH 20V 1.8A UFM Toshiba Semiconductor and Storage |
4,079 | - |
|
数据手册 |
U-MOSIII | 3-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | - | ±8V | 250 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFM |
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TK40P03M1(T6RSS-Q)MOSFET N-CH 30V 40A DP Toshiba Semiconductor and Storage |
5,686 | - |
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数据手册 |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | - | - | - | Surface Mount | DPAK |
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TK40P04M1(T6RSS-Q)MOSFET N-CH 40V 40A DP Toshiba Semiconductor and Storage |
6,191 | - |
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数据手册 |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.3V @ 200µA | 29 nC @ 10 V | ±20V | 1920 pF @ 10 V | - | 47W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK4A60DA(STA4,Q,M)MOSFET N-CH 600V 3.5A TO220SIS Toshiba Semiconductor and Storage |
3,900 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | - | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK10S04K3L(T6L1,NQMOSFET N-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
2,123 | - |
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数据手册 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 410 pF @ 10 V | - | 25W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK11A60D(STA4,Q,M)MOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage |
6,995 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK15A60D(STA4,Q,M)MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage |
2,606 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
