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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPCA8103(TE12L,Q,MMOSFET P-CH 30V 40A 8SOP Toshiba Semiconductor and Storage |
6,353 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta) | 4V, 10V | 4.2mOhm @ 20A, 10V | 2V @ 1mA | 184 nC @ 10 V | ±20V | 7880 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCA8105(TE12L,Q,MMOSFET P-CH 12V 6A 8SOP Toshiba Semiconductor and Storage |
5,824 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 33mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18 nC @ 5 V | ±8V | 1600 pF @ 10 V | - | 1.6W (Ta), 20W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCA8A01-H(TE12L,QMOSFET N-CH 30V 36A 8SOP Toshiba Semiconductor and Storage |
8,060 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 36A (Ta) | 4.5V, 10V | 5.6mOhm @ 18A, 10V | 2.3V @ 1mA | 35 nC @ 10 V | ±20V | 1970 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCF8102(TE85L,F,MMOSFET P-CH 20V 6A VS-8 Toshiba Semiconductor and Storage |
4,828 | - |
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数据手册 |
U-MOSIII | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.8V, 4.5V | 30mOhm @ 3A, 4.5V | 1.2V @ 200µA | 19 nC @ 5 V | ±8V | 1550 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-8 (2.9x1.5) |
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TPCP8001-H(TE85LFMMOSFET N-CH 30V 7.2A PS-8 Toshiba Semiconductor and Storage |
5,962 | - |
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数据手册 |
U-MOSIII | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 16mOhm @ 3.6A, 10V | 2.3V @ 1mA | 11 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 1W (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | PS-8 (2.9x2.4) |
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2SK3128(Q)MOSFET N-CH 30V 60A TO3P Toshiba Semiconductor and Storage |
3,924 | - |
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数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Ta) | 10V | 12mOhm @ 30A, 10V | 3V @ 1mA | 66 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 150W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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2SJ304(F)MOSFET P-CH 60V 14A TO220NIS Toshiba Semiconductor and Storage |
6,390 | - |
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数据手册 |
- | TO-220-3 Full Pack | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 4V, 10V | 120mOhm @ 7A, 10V | 2V @ 1mA | 45 nC @ 10 V | ±20V | 1200 pF @ 10 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220NIS |
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2SJ610(TE16L1,NQ)MOSFET P-CH 250V 2A PW-MOLD Toshiba Semiconductor and Storage |
6,685 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 2A (Ta) | 10V | 2.55Ohm @ 1A, 10V | 3.5V @ 1mA | 24 nC @ 10 V | ±20V | 381 pF @ 10 V | - | 20W (Ta) | 150°C (TJ) | - | - | Surface Mount | PW-MOLD |
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2SJ681(Q)MOSFET P-CH 60V 5A PW-MOLD2 Toshiba Semiconductor and Storage |
4,257 | - |
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数据手册 |
- | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15 nC @ 10 V | ±20V | 700 pF @ 10 V | - | 20W (Ta) | 150°C (TJ) | - | - | Through Hole | PW-MOLD2 |
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2SK2507(F)MOSFET N-CH 50V 25A TO220NIS Toshiba Semiconductor and Storage |
7,232 | - |
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数据手册 |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 25A (Ta) | 4V, 10V | 46mOhm @ 12A, 10V | 2V @ 1mA | 25 nC @ 10 V | ±20V | 900 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220NIS |
