电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK13A60D(STA4,Q,M)MOSFET N-CH 600V 13A TO220SIS Toshiba Semiconductor and Storage |
6,464 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK6A60D(STA4,Q,M)MOSFET N-CH 600V 6A TO220SIS Toshiba Semiconductor and Storage |
9,901 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Ta) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPC8042(TE12L,Q,M)MOSFET N-CH 30V 18A 8SOP Toshiba Semiconductor and Storage |
4,114 | - |
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数据手册 |
U-MOSIV | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 3.4mOhm @ 9A, 10V | 2.5V @ 1mA | 56 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP (5.5x6.0) |
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TPC8048-H(TE12L,Q)MOSFET N-CH 60V 16A 8SOP Toshiba Semiconductor and Storage |
4,865 | - |
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数据手册 |
U-MOSVI-H | 8-SOIC (0.173", 4.40mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Ta) | 4.5V, 10V | 6.9mOhm @ 8A, 10V | 2.3V @ 1mA | 87 nC @ 10 V | ±20V | 7540 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP (5.5x6.0) |
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SSM3J307T(TE85L,F)MOSFET P-CH 20V 5A TSM Toshiba Semiconductor and Storage |
6,514 | - |
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数据手册 |
U-MOSV | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 1.5V, 4.5V | 31mOhm @ 4A, 4.5V | 1V @ 1mA | 19 nC @ 4.5 V | ±8V | 1170 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | TSM |
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SSM3K7002BSU,LFMOSFET N-CH 60V 200MA USM Toshiba Semiconductor and Storage |
4,299 | - |
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数据手册 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | ±20V | 17 pF @ 25 V | - | 150mW (Ta) | 150°C (TJ) | - | - | Surface Mount | USM |
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SSM4K27CTTPL3MOSFET N-CH 20V 500MA CST4 Toshiba Semiconductor and Storage |
7,954 | - |
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数据手册 |
U-MOSIII | 4-SMD, No Lead | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.8V, 4V | 205mOhm @ 250mA, 4V | 1.1V @ 1mA | - | ±12V | 174 pF @ 10 V | - | 400mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST4 (1.2x0.8) |
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SSM6J53FE(TE85L,F)MOSFET P-CH 20V 1.8A ES6 Toshiba Semiconductor and Storage |
8,871 | - |
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数据手册 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.8A (Ta) | 1.5V, 2.5V | 136mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6 nC @ 4 V | ±8V | 568 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ES6 |
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SSM3K106TU(TE85L)MOSFET N-CH 20V 1.2A UFM Toshiba Semiconductor and Storage |
3,371 | - |
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数据手册 |
π-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 4V, 10V | 310mOhm @ 600mA, 10V | 2.3V @ 100µA | - | ±20V | 36 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | UFM |
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TK13A65U(STA4,Q,M)MOSFET N-CH 650V 13A TO220SIS Toshiba Semiconductor and Storage |
8,355 | - |
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数据手册 |
DTMOSII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Ta) | 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
