电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SK4016(Q)MOSFET N-CH 600V 13A TO220SIS Toshiba Semiconductor and Storage |
2,536 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Ta) | 10V | 500mOhm @ 6.5A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
2SK4017(Q)MOSFET N-CH 60V 5A PW-MOLD2 Toshiba Semiconductor and Storage |
7,745 | - |
|
数据手册 |
U-MOSIII | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 100mOhm @ 2.5A, 10V | 2.5V @ 1mA | 15 nC @ 10 V | ±20V | 730 pF @ 10 V | - | 20W (Tc) | 150°C (TJ) | - | - | Through Hole | PW-MOLD2 |
|
|
2SK4021(Q)MOSFET N-CH 250V 4.5A PW-MOLD2 Toshiba Semiconductor and Storage |
5,117 | - |
|
数据手册 |
- | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.5A (Ta) | 10V | 1Ohm @ 2.5A, 10V | 3.5V @ 1mA | 10 nC @ 10 V | ±20V | 440 pF @ 10 V | - | 20W (Tc) | 150°C (TJ) | - | - | Through Hole | PW-MOLD2 |
|
TPC8026(TE12L,Q,M)MOSFET N-CH 30V 13A 8SOP Toshiba Semiconductor and Storage |
8,352 | - |
|
数据手册 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 6.6mOhm @ 6.5A, 10V | 2.5V @ 1mA | 42 nC @ 10 V | ±20V | 1800 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP (5.5x6.0) |
|
|
TPC8036-H(TE12L,QMMOSFET N-CH 30V 18A 8SOP Toshiba Semiconductor and Storage |
8,406 | - |
|
数据手册 |
U-MOSVI-H | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.5mOhm @ 9A, 10V | 2.3V @ 1mA | 49 nC @ 10 V | ±20V | 4600 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP (5.5x6.0) |
|
TPCA8036-H(TE12L,QMOSFET N-CH 30V 38A 8SOP Toshiba Semiconductor and Storage |
6,978 | - |
|
数据手册 |
U-MOSVI-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Ta) | 4.5V, 10V | 4.2mOhm @ 19A, 10V | 2.3V @ 500µA | 50 nC @ 10 V | ±20V | 4600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
|
TPCA8A02-H(TE12LQMMOSFET N-CH 30V 34A 8SOP Toshiba Semiconductor and Storage |
7,670 | - |
|
数据手册 |
U-MOSV-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 5.3mOhm @ 17A, 10V | 2.3V @ 1mA | 36 nC @ 10 V | ±20V | 3430 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
|
TPCA8A04-H(TE12L,QMOSFET N-CH 30V 44A 8SOP Toshiba Semiconductor and Storage |
7,418 | - |
|
数据手册 |
U-MOSV-H | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 44A (Ta) | 4.5V, 10V | 3.2mOhm @ 22A, 10V | 2.3V @ 1mA | 59 nC @ 10 V | ±20V | 5700 pF @ 10 V | - | - | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
|
TPCP8003-H(TE85L,FMOSFET N-CH 100V 2.2A PS-8 Toshiba Semiconductor and Storage |
4,078 | - |
|
数据手册 |
U-MOSIII-H | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.2A (Ta) | 4.5V, 10V | 180mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5 nC @ 10 V | ±20V | 360 pF @ 10 V | - | 840mW (Ta) | 150°C (TJ) | - | - | Surface Mount | PS-8 (2.9x2.4) |
|
|
TK10A60D(STA4,Q,M)MOSFET N-CH 600V 10A TO220SIS Toshiba Semiconductor and Storage |
4,140 | - |
|
数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
