| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK15A60U(STA4,Q,M)MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage |
5,141 | - |
|
数据手册 |
DTMOSII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TK20A60U(Q,M)MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage |
8,246 | - |
|
数据手册 |
DTMOSII | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27 nC @ 10 V | ±30V | 1470 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TPC6109-H(TE85L,FMMOSFET P-CH 30V 5A VS-6 Toshiba Semiconductor and Storage |
7,807 | - |
|
数据手册 |
U-MOSIII-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3 nC @ 10 V | ±20V | 490 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
2SK2266(TE24R,Q)MOSFET N-CH 60V 45A TO220SM Toshiba Semiconductor and Storage |
9,841 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Ta) | 4V, 10V | 30mOhm @ 25A, 10V | 2V @ 1mA | 60 nC @ 10 V | ±20V | 1800 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
|
|
2SK2376(Q)MOSFET N-CH 60V 45A TO220FL Toshiba Semiconductor and Storage |
4,802 | - |
|
数据手册 |
- | TO-220-3, Short Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Ta) | 4V, 10V | 17mOhm @ 25A, 10V | 2V @ 1mA | 110 nC @ 10 V | ±20V | 3350 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FL |
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2SK3309(Q)MOSFET N-CH 450V 10A TO220FL Toshiba Semiconductor and Storage |
8,487 | - |
|
数据手册 |
- | TO-220-3, Short Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23 nC @ 10 V | ±30V | 920 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FL |
|
2SK3309(TE24L,Q)MOSFET N-CH 450V 10A TO220SM Toshiba Semiconductor and Storage |
2,032 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23 nC @ 10 V | ±30V | 920 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
|
TK12A60U(Q,M)MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage |
6,700 | - |
|
数据手册 |
DTMOSII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14 nC @ 10 V | ±30V | 720 pF @ 10 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TK12J60U(F)MOSFET N-CH 600V 12A TO3P Toshiba Semiconductor and Storage |
9,402 | - |
|
数据手册 |
DTMOSII | TO-3P-3, SC-65-3 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14 nC @ 10 V | ±30V | 720 pF @ 10 V | - | 144W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
TK15J60U(F)MOSFET N-CH 600V 15A TO3P Toshiba Semiconductor and Storage |
8,910 | - |
|
数据手册 |
DTMOSII | TO-3P-3, SC-65-3 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 170W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |

