| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK2719(F)MOSFET N-CH 900V 3A TO3P Toshiba Semiconductor and Storage |
7,557 | - |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
2SK2847(F)MOSFET N-CH 900V 8A TO3PIS Toshiba Semiconductor and Storage |
5,627 | - |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Ta) | 10V | 1.4Ohm @ 4A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±30V | 2040 pF @ 25 V | - | 85W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N)IS |
|
2SK2917(F)MOSFET N-CH 500V 18A TO3PIS Toshiba Semiconductor and Storage |
3,466 | - |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Ta) | 10V | 270mOhm @ 10A, 10V | 4V @ 1mA | 80 nC @ 10 V | ±30V | 3720 pF @ 10 V | - | 90W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N)IS |
|
2SK2967(F)MOSFET N-CH 250V 30A TO3P Toshiba Semiconductor and Storage |
6,449 | - |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 150W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
2SK2993(TE24L,Q)MOSFET N-CH 250V 20A TO220SM Toshiba Semiconductor and Storage |
3,849 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4000 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
|
2SK2995(F)MOSFET N-CH 250V 30A TO3PIS Toshiba Semiconductor and Storage |
5,899 | - |
|
数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 90W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N)IS |
|
2SK3068(TE24L,Q)MOSFET N-CH 500V 12A TO220SM Toshiba Semiconductor and Storage |
7,947 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2040 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
|
2SK3127(TE24L,Q)MOSFET N-CH 30V 45A TO220SM Toshiba Semiconductor and Storage |
4,038 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Ta) | 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 66 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
|
2SK3132(Q)MOSFET N-CH 500V 50A TO3P Toshiba Semiconductor and Storage |
2,348 | - |
|
数据手册 |
- | TO-3PL | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 95mOhm @ 25A, 10V | 3.4V @ 1mA | 280 nC @ 10 V | ±30V | 11000 pF @ 10 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(L) |
|
2SK3565(Q,M)MOSFET N-CH 900V 5A TO220SIS Toshiba Semiconductor and Storage |
4,634 | - |
|
数据手册 |
π-MOSIV | TO-220-3 Full Pack | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 900 V | 5A (Ta) | 10V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1150 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |

