电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK16V60W,LVQMOSFET N-CH 600V 15.8A 4DFN Toshiba Semiconductor and Storage |
7,336 | - |
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数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 139W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK10V60W,LVQMOSFET N-CH 600V 9.7A 4DFN Toshiba Semiconductor and Storage |
2,346 | - |
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数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 88.3W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK155U65Z,RQDTMOS VI TOLL PD=150W F=1MHZ Toshiba Semiconductor and Storage |
4,768 | - |
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数据手册 |
DTMOSVI | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | 150°C | - | - | Surface Mount | TOLL |
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TK25A60X5,S5XMOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage |
2,608 | - |
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数据手册 |
DTMOSIV-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK20V60W,LVQMOSFET N-CH 600V 20A 4DFN Toshiba Semiconductor and Storage |
4,482 | - |
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数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 170mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 156W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TW070J120B,S1QSICFET N-CH 1200V 36A TO3P Toshiba Semiconductor and Storage |
4,273 | - |
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数据手册 |
- | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 90mOhm @ 18A, 20V | 5.8V @ 20mA | 67 nC @ 20 V | ±25V, -10V | 1680 pF @ 800 V | - | 272W (Tc) | -55°C ~ 175°C | - | - | Through Hole | TO-3P(N) |
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TPCA8007-H(TE12L,QMOSFET N-CH 100V 20A 8-SOPA Toshiba Semiconductor and Storage |
3,037 | - |
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数据手册 |
* | - | Cut Tape (CT) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TPCA8009-H(TE12L,QMOSFET N-CH 150V 7A 8SOP Toshiba Semiconductor and Storage |
8,110 | - |
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数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 7A (Ta) | 10V | 350mOhm @ 3.5A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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2SK2963(TE12L,F)MOSFET N-CH 100V 1A PW-MINI Toshiba Semiconductor and Storage |
5,983 | - |
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数据手册 |
- | TO-243AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 4V, 10V | 700mOhm @ 500mA, 10V | 2V @ 1mA | 6.3 nC @ 10 V | ±20V | 140 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | PW-MINI |
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TPCF8B01(TE85L,F,MMOSFET P-CH 20V 2.7A VS-8 Toshiba Semiconductor and Storage |
5,864 | - |
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数据手册 |
U-MOSIII | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.7A (Ta) | 1.8V, 4.5V | 110mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6 nC @ 5 V | ±8V | 470 pF @ 10 V | Schottky Diode (Isolated) | 330mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-8 (2.9x1.5) |
