电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TK4P60DA(T6RSS-Q)MOSFET N-CH 600V 3.5A DPAK Toshiba Semiconductor and Storage |
5,443 | - |
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数据手册 |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 80W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK4P60DB(T6RSS-Q)MOSFET N-CH 600V 3.7A DPAK Toshiba Semiconductor and Storage |
6,312 | - |
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数据手册 |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 80W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK50E06K3A,S1X(SMOSFET N-CH 60V 50A TO220-3 Toshiba Semiconductor and Storage |
5,229 | - |
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数据手册 |
U-MOSIV | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 8.5mOhm @ 25A, 10V | - | 54 nC @ 10 V | - | - | - | - | - | - | - | Through Hole | TO-220-3 |
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TK50E06K3(S1SS-Q)MOSFET N-CH 60V 50A TO220-3 Toshiba Semiconductor and Storage |
5,209 | - |
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数据手册 |
U-MOSIV | TO-220-3 | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 |
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TK50E08K3,S1X(SMOSFET N-CH 75V 50A TO220-3 Toshiba Semiconductor and Storage |
8,361 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 50A (Tc) | - | 12mOhm @ 25A, 10V | - | 55 nC @ 10 V | - | - | - | - | - | - | - | Through Hole | TO-220-3 |
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TK50E10K3(S1SS-Q)MOSFET N-CH 100V 50A TO-220AB Toshiba Semiconductor and Storage |
8,179 | - |
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数据手册 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 |
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TK60E08K3,S1X(SMOSFET N-CH 75V 60A TO220-3 Toshiba Semiconductor and Storage |
5,814 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 60A | - | 9mOhm @ 30A, 10V | - | 75 nC @ 10 V | - | - | - | 128W | - | - | - | Through Hole | TO-220-3 |
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TK60P03M1,RQ(SMOSFET N-CH 30V 60A DPAK Toshiba Semiconductor and Storage |
2,530 | - |
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数据手册 |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Ta) | 4.5V, 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500µA | 40 nC @ 10 V | ±20V | 2700 pF @ 10 V | - | 63W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK65S04K3L(T6L1,NQMOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage |
9,208 | - |
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数据手册 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 65A (Ta) | 6V, 10V | 4.5mOhm @ 32.5A, 10V | 3V @ 1mA | 63 nC @ 10 V | ±20V | 2800 pF @ 10 V | - | 88W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK80S04K3L(T6L1,NQMOSFET N-CH 40V 80A DPAK Toshiba Semiconductor and Storage |
4,452 | - |
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数据手册 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 6V, 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 87 nC @ 10 V | ±20V | 4340 pF @ 10 V | - | 100W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
