| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK80S06K3L(T6L1,NQMOSFET N-CH 60V 80A DPAK Toshiba Semiconductor and Storage |
8,637 | - |
|
数据手册 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Ta) | 6V, 10V | 5.5mOhm @ 40A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 100W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
|
TK8A60DA(STA4,Q,M)MOSFET N-CH 600V 7.5A TO220SIS Toshiba Semiconductor and Storage |
3,828 | - |
|
数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TPC6008-H(TE85L,FMMOSFET N-CH 30V 5.9A VS-6 Toshiba Semiconductor and Storage |
7,232 | - |
|
数据手册 |
U-MOSVI-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.9A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8 nC @ 10 V | ±20V | 300 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
TPC6009-H(TE85L,FMMOSFET N-CH 40V 5.3A VS-6 Toshiba Semiconductor and Storage |
6,673 | - |
|
数据手册 |
U-MOSVI-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7 nC @ 10 V | ±20V | 290 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
TPC6010-H(TE85L,FMMOSFET N-CH 60V 6.1A VS-6 Toshiba Semiconductor and Storage |
9,673 | - |
|
数据手册 |
U-MOSVI-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.1A (Ta) | 4.5V, 10V | 59mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12 nC @ 10 V | ±20V | 830 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
TPC6011(TE85L,F,M)MOSFET N-CH 30V 6A VS-6 Toshiba Semiconductor and Storage |
2,346 | - |
|
数据手册 |
U-MOSIV | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 14 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
TPC6012(TE85L,F,M)MOSFET N-CH 20V 6A VS-6 Toshiba Semiconductor and Storage |
4,709 | - |
|
数据手册 |
U-MOSIV | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9 nC @ 5 V | ±12V | 630 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
TPC6110(TE85L,F,M)MOSFET P-CH 30V 4.5A VS-6 Toshiba Semiconductor and Storage |
6,510 | - |
|
数据手册 |
U-MOSVI | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | - | 56mOhm @ 2.2A, 10V | 2V @ 100µA | 14 nC @ 10 V | - | 510 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
|
TPC6113(TE85L,F,M)MOSFET P-CH 20V 5A VS-6 Toshiba Semiconductor and Storage |
8,423 | - |
|
数据手册 |
U-MOSVI | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 2.5V, 4.5V | 55mOhm @ 2.5A, 4.5V | 1.2V @ 200µA | 10 nC @ 5 V | ±12V | 690 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
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TPC8062-H,LQ(CMMOSFET N-CH 30V 18A 8SOP Toshiba Semiconductor and Storage |
4,584 | - |
|
数据手册 |
U-MOSVII-H | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 5.8mOhm @ 9A, 10V | 2.3V @ 300µA | 34 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |

