| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR214TRLPBFMOSFET N-CH 250V 2.2A DPAK Vishay Siliconix |
8,772 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SI7230DN-T1-E3MOSFET N-CH 30V 9A PPAK 1212-8 Vishay Siliconix |
4,002 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 12mOhm @ 14A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SIHB22N60EL-GE3MOSFET N-CH 600V 21A TO263 Vishay Siliconix |
9,226 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIR878DP-T1-GE3MOSFET N-CH 100V 40A PPAK SO-8 Vishay Siliconix |
8,695 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 14mOhm @ 15A, 10V | 2.8V @ 250µA | 43 nC @ 10 V | ±20V | 1250 pF @ 50 V | - | 5W (Ta), 44.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFBC40ASTRRPBFMOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix |
7,819 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRL3103D1STRRMOSFET N-CH 30V 64A D2PAK Vishay Siliconix |
4,842 | - |
|
数据手册 |
FETKY™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | - | 14mOhm @ 34A, 10V | 1V @ 250µA | 43 nC @ 4.5 V | - | 1900 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFB17N60KPBFMOSFET N-CH 600V 17A TO220AB Vishay Siliconix |
6,562 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 420mOhm @ 10A, 10V | 5V @ 250µA | 99 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SUP60N02-4M5P-E3MOSFET N-CH 20V 60A TO220AB Vishay Siliconix |
3,756 | - |
|
数据手册 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 3V @ 250µA | 50 nC @ 4.5 V | ±20V | 5950 pF @ 10 V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF624SMOSFET N-CH 250V 4.4A D2PAK Vishay Siliconix |
3,632 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI7868ADP-T1-GE3MOSFET N-CH 20V 40A PPAK SO-8 Vishay Siliconix |
2,821 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 40A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 1.6V @ 250µA | 150 nC @ 10 V | ±16V | 6110 pF @ 10 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |

