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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP22N60EL-GE3MOSFET N-CH 600V 21A TO220AB Vishay Siliconix |
5,473 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIE808DF-T1-GE3MOSFET N-CH 20V 60A 10POLARPAK Vishay Siliconix |
8,547 | - |
|
数据手册 |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 3V @ 250µA | 155 nC @ 10 V | ±20V | 8800 pF @ 10 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
|
SUD06N10-225L-E3MOSFET N-CH 100V 6.5A TO252 Vishay Siliconix |
8,353 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.5A (Tc) | 4.5V, 10V | 200mOhm @ 3A, 10V | 3V @ 250µA | 4 nC @ 5 V | ±20V | 240 pF @ 25 V | - | 1.25W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRF9610SMOSFET P-CH 200V 1.8A D2PAK Vishay Siliconix |
3,516 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFD9123PBFMOSFET P-CH 100V 1A 4DIP Vishay Siliconix |
5,186 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | - | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | - | 390 pF @ 25 V | - | - | - | - | - | Through Hole | 4-HVMDIP |
|
SIHA22N60EL-E3MOSFET N-CHANNEL 600V 21A TO220 Vishay Siliconix |
8,443 | - |
|
数据手册 |
EL | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIHB22N60ET5-GE3MOSFET N-CH 600V 21A TO263 Vishay Siliconix |
8,305 | - |
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数据手册 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SI7120DN-T1-E3MOSFET N-CH 60V 6.3A 1212-8 Vishay Siliconix |
6,246 | - |
|
数据手册 |
- | PowerPAK® 1212-8 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.3A (Ta) | - | 19mOhm @ 10A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | - | - | - | - | - | - | - | Surface Mount | PowerPAK® 1212-8 |
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SI7120DN-T1-GE3MOSFET N-CH 60V 6.3A 1212-8 Vishay Siliconix |
8,445 | - |
|
数据手册 |
- | PowerPAK® 1212-8 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.3A (Ta) | - | 19mOhm @ 10A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | - | - | - | - | - | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SIJ458DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
5,488 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.5V @ 250µA | 122 nC @ 10 V | ±20V | 4810 pF @ 15 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
