| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SUM90N04-3M3P-E3MOSFET N-CH 40V 90A TO263 Vishay Siliconix |
8,107 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2.5V @ 250µA | 131 nC @ 10 V | ±20V | 5286 pF @ 20 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRL2203STRLMOSFET N-CH 30V 100A D2PAK Vishay Siliconix |
9,537 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4V, 10V | 7mOhm @ 60A, 10V | 2.5V @ 250µA | 110 nC @ 4.5 V | ±20V | 3500 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRL2203STRRMOSFET N-CH 30V 100A D2PAK Vishay Siliconix |
5,916 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4V, 10V | 7mOhm @ 60A, 10V | 2.5V @ 250µA | 110 nC @ 4.5 V | ±20V | 3500 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFZ34SMOSFET N-CH 60V 30A D2PAK Vishay Siliconix |
7,824 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI4864DY-T1-E3MOSFET N-CH 20V 17A 8SO Vishay Siliconix |
2,671 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 17A (Ta) | 2.5V, 4.5V | 3.5mOhm @ 25A, 4.5V | 2V @ 250µA | 70 nC @ 4.5 V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI4038DY-T1-GE3MOSFET N-CH 40V 42.5A 8SO Vishay Siliconix |
2,113 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42.5A (Tc) | 4.5V, 10V | 2.4mOhm @ 15A, 10V | 2.1V @ 250µA | 87 nC @ 10 V | ±20V | 4070 pF @ 20 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SIHG17N60D-E3MOSFET N-CH 600V 17A TO247AC Vishay Siliconix |
8,554 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 1780 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG17N60D-GE3MOSFET N-CH 600V 17A TO247AC Vishay Siliconix |
2,429 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 1780 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIR476DP-T1-GE3MOSFET N-CH 25V 60A PPAK SO-8 Vishay Siliconix |
4,538 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 6150 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHG460B-GE3MOSFET N-CH 500V 20A TO247AC Vishay Siliconix |
7,561 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 3094 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |

