| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7790DP-T1-GE3MOSFET N-CH 40V 50A PPAK SO-8 Vishay Siliconix |
2,387 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | ±25V | 4200 pF @ 20 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF820SMOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix |
6,716 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF820ALMOSFET N-CH 500V 2.5A I2PAK Vishay Siliconix |
4,579 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
SI4642DY-T1-E3MOSFET N-CH 30V 34A 8SO Vishay Siliconix |
8,739 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Tc) | 4.5V, 10V | 3.75mOhm @ 20A, 10V | 3V @ 1mA | 110 nC @ 10 V | ±20V | 5540 pF @ 15 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRFD320MOSFET N-CH 400V 490MA 4DIP Vishay Siliconix |
8,257 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 490mA (Ta) | 10V | 1.8Ohm @ 210mA, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
IRFD420MOSFET N-CH 500V 370MA 4DIP Vishay Siliconix |
3,578 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 370mA (Ta) | 10V | 3Ohm @ 220mA, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
SIE726DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix |
7,121 | - |
|
数据手册 |
SkyFET®, TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 7400 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
|
SUD50N04-05L-E3MOSFET N-CH 40V 115A TO252 Vishay Siliconix |
6,870 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 115A (Tc) | 4.5V, 10V | 5.4mOhm @ 20A, 10V | 3V @ 250µA | 135 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SI7804DN-T1-E3MOSFET N-CH 30V 6.5A PPAK1212-8 Vishay Siliconix |
6,641 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 18.5mOhm @ 10A, 10V | 1.8V @ 250µA | 13 nC @ 5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SIR670DP-T1-GE3MOSFET N-CH 60V 60A PPAK SO-8 Vishay Siliconix |
8,090 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.8V @ 250µA | 63 nC @ 10 V | ±20V | 2815 pF @ 30 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |

