| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR9010TRLPBFMOSFET P-CH 50V 5.3A DPAK Vishay Siliconix |
9,364 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SI4426DY-T1-E3MOSFET N-CH 20V 6.5A 8SO Vishay Siliconix |
5,917 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 25mOhm @ 8.5A, 4.5V | 1.4V @ 250µA | 50 nC @ 4.5 V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRF634SMOSFET N-CH 250V 8.1A D2PAK Vishay Siliconix |
9,568 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF9520SMOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix |
5,389 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFL9014MOSFET P-CH 60V 1.8A SOT223 Vishay Siliconix |
4,243 | - |
|
数据手册 |
- | TO-261-4, TO-261AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IRFL9014TRMOSFET P-CH 60V 1.8A SOT223 Vishay Siliconix |
3,048 | - |
|
数据手册 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IRFI9Z14GMOSFET P-CH 60V 5.3A TO220-3 Vishay Siliconix |
8,511 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.3A (Tc) | 10V | 500mOhm @ 3.2A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
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SIHP22N65E-GE3MOSFET N-CH 650V 22A TO220AB Vishay Siliconix |
7,413 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2415 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SI4825DY-T1-E3MOSFET P-CH 30V 8.1A 8SO Vishay Siliconix |
6,035 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8.1A (Ta) | 4.5V, 10V | 14mOhm @ 11.5A, 10V | 3V @ 250µA | 71 nC @ 10 V | ±25V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI4825DY-T1-GE3MOSFET P-CH 30V 8.1A 8SO Vishay Siliconix |
7,199 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8.1A (Ta) | 4.5V, 10V | 14mOhm @ 11.5A, 10V | 3V @ 250µA | 71 nC @ 10 V | ±25V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |

