电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJ488EP-T1_GE3MOSFET N-CH 100V 42A PPAK SO-8 Vishay Siliconix |
3,878 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 21mOhm @ 7.4A, 10V | 2.5V @ 250µA | 27 nC @ 10 V | ±20V | 979 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJ403EP-T1_GE3MOSFET P-CH 30V 30A PPAK SO-8 Vishay Siliconix |
3,662 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 109 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJ182EP-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
3,000 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 210A (Tc) | 10V | 5mOhm @ 15A, 10V | 3.5V @ 250µA | 96 nC @ 10 V | ±20V | 5392 pF @ 25 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQR70090ELR_GE3MOSFET N-CH 100V 86A DPAK Vishay Siliconix |
1,788 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 86A (Tc) | 4.5V, 10V | 8.7mOhm @ 25A, 10V | 2.5V @ 250µA | 65 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
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SUD70090E-GE3MOSFET N-CH 100V 50A TO252 Vishay Siliconix |
1,418 | - |
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数据手册 |
ThunderFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 7.5V, 10V | 8.9mOhm @ 20A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 1950 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SIRA50DP-T1-RE3MOSFET N-CH 40V 62.5A/100A PPAK Vishay Siliconix |
2,900 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 62.5A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2.2V @ 250µA | 194 nC @ 10 V | +20V, -16V | 8445 pF @ 20 V | - | 6.25W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIHP15N50E-GE3MOSFET N-CH 500V 14.5A TO220AB Vishay Siliconix |
11,356 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±30V | 1162 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFBE30PBF-BE3MOSFET N-CH 800V 4.1A TO220AB Vishay Siliconix |
2,647 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | - | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SISS80DN-T1-GE3MOSFET N-CH 20V 58.3A/210A PPAK Vishay Siliconix |
11,696 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 58.3A (Ta), 210A (Tc) | 2.5V, 10V | 0.92mOhm @ 10A, 10V | 1.5V @ 250µA | 122 nC @ 10 V | +12V, -8V | 6450 pF @ 10 V | - | 5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SIR582DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET POWE Vishay Siliconix |
5,935 | - |
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数据手册 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 28.9A (Ta), 116A (Tc) | 7.5V, 10V | 3.4mOhm @ 15A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 3360 pF @ 40 V | - | 5.6W (Ta), 92.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
