电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SISS04DN-T1-GE3MOSFET N-CH 30V 50.5A/80A PPAK Vishay Siliconix |
4,202 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50.5A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 93 nC @ 10 V | +16V, -12V | 4460 pF @ 15 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SQJ138ELP-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
1,597 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 315A (Tc) | 4.5V, 10V | 1.5mOhm @ 15A, 10V | 2.2V @ 250µA | 117 nC @ 10 V | ±20V | 6685 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
IRL510STRLPBFMOSFET N-CH 100V 5.6A D2PAK Vishay Siliconix |
601 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 4V, 5V | 540mOhm @ 3.4A, 5V | 2V @ 250µA | 6.1 nC @ 5 V | ±10V | 250 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SQJ886EP-T1_GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
4,801 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 4.5mOhm @ 15.3A, 10V | 2.5V @ 250µA | 65 nC @ 10 V | ±20V | 2922 pF @ 20 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SIR188LDP-T1-RE3N-CHANNEL 60-V (D-S) MOSFET POWE Vishay Siliconix |
4,115 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25.8A (Ta), 93.6A (Tc) | 4.5V, 10V | 3.75mOhm @ 15A, 10V | 2.5V @ 250µA | 52 nC @ 10 V | ±20V | 2300 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SUD90330E-GE3MOSFET N-CH 200V 35.8A TO252AA Vishay Siliconix |
1,890 | - |
|
数据手册 |
ThunderFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 35.8A (Tc) | 7.5V, 10V | 37.5mOhm @ 12.2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1172 pF @ 100 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFR120TRPBFMOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
1,648 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SIJ470DP-T1-GE3MOSFET N-CH 100V 58.8A PPAK SO-8 Vishay Siliconix |
680 | - |
|
数据手册 |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 58.8A (Tc) | 7.5V, 10V | 9.1mOhm @ 20A, 10V | 3.5V @ 250µA | 56 nC @ 10 V | ±20V | 2050 pF @ 50 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF9Z10PBFMOSFET P-CH 60V 6.7A TO220AB Vishay Siliconix |
364 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
SIJ478DP-T1-GE3MOSFET N-CH 80V 60A PPAK SO-8 Vishay Siliconix |
10,577 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.6V @ 250µA | 54 nC @ 10 V | ±20V | 1855 pF @ 40 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
