电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJ140ELP-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
11,920 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 253A (Tc) | 4.5V, 10V | 2.14mOhm @ 15A, 10V | 2.2V @ 250µA | 87 nC @ 10 V | ±20V | 4665 pF @ 25 V | - | 255W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SIJA22DP-T1-GE3MOSFET N-CH 25V 64A/201A PPAK Vishay Siliconix |
4,810 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 64A (Ta), 201A (Tc) | - | 0.74mOhm @ 20A, 10V | 2.2V @ 250µA | 125 nC @ 10 V | +20V, -16V | 6500 pF @ 15 V | - | 4.8W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SI4686DY-T1-E3MOSFET N-CH 30V 18.2A 8SO Vishay Siliconix |
6,381 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18.2A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1220 pF @ 15 V | - | 3W (Ta), 5.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SIR586DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET POWE Vishay Siliconix |
8,178 | - |
|
数据手册 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 20.7A (Ta), 78.4A (Tc) | 7.5V, 10V | 5.8mOhm @ 10A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 1905 pF @ 40 V | - | 5W (Ta), 71.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJ433EP-T1_GE3MOSFET P-CH 30V 75A PPAK SO-8 Vishay Siliconix |
4,948 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 8.1mOhm @ 16A, 10V | 2.5V @ 250µA | 108 nC @ 10 V | ±20V | 4877 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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IRF530PBF-BE3MOSFET N-CH 100V 14A TO220AB Vishay Siliconix |
644 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SIR464DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 Vishay Siliconix |
5,845 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 3.1mOhm @ 15A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | ±20V | 3545 pF @ 15 V | - | 5.2W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR4604LDP-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
5,326 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15.6A (Ta), 51A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1180 pF @ 30 V | - | 3.9W (Ta), 41.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJA66EP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
2,816 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 3mOhm @ 10A, 10V | 3.3V @ 250µA | 98 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQD10950E_GE3MOSFET N-CH 250V 11.5A TO252AA Vishay Siliconix |
3,918 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 11.5A (Tc) | 7.5V, 10V | 162mOhm @ 12A, 10V | 3.5V @ 250µA | 16 nC @ 10 V | ±20V | 785 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
