| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR188DP-T1-RE3MOSFET N-CH 60V 25.5A/60A PPAK Vishay Siliconix |
2,574 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25.5A (Ta), 60A (Tc) | 7.5V, 10V | 3.85mOhm @ 10A, 10V | 3.6V @ 250µA | 44 nC @ 10 V | ±20V | 1920 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQ4483EY-T1_GE3MOSFET P-CHANNEL 30V 30A 8SOIC Vishay Siliconix |
2,418 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 7W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
|
SQJ460AEP-T1_GE3MOSFET N-CH 60V 32A PPAK SO-8 Vishay Siliconix |
1,815 | - |
|
数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 4.5V, 10V | 9.6mOhm @ 18A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 4795 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SQ4483EY-T1_BE3MOSFET P-CHANNEL 30V 30A 8SOIC Vishay Siliconix |
1,552 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 7W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
|
SIR606DP-T1-GE3MOSFET N-CH 100V 37A PPAK SO-8 Vishay Siliconix |
5,082 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 6V, 10V | 16.2mOhm @ 15A, 10V | 3.6V @ 250µA | 22 nC @ 6 V | ±20V | 1360 pF @ 50 V | - | 44.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFU220PBFMOSFET N-CH 200V 4.8A TO251AA Vishay Siliconix |
1,496 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
IRFZ14SPBFMOSFET N-CH 60V 10A D2PAK Vishay Siliconix |
1,078 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFU9014PBFMOSFET P-CH 60V 5.1A TO251AA Vishay Siliconix |
406 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
IRFR310PBFMOSFET N-CH 400V 1.7A DPAK Vishay Siliconix |
2,299 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SQJA72EP-T1_GE3MOSFET N-CH 100V 37A PPAK SO-8 Vishay Siliconix |
8,440 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 4.5V, 10V | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1390 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |

