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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFIZ14GPBFMOSFET N-CH 60V 8A TO220-3 Vishay Siliconix |
758 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 10V | 200mOhm @ 4.8A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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SQ4182EY-T1_GE3MOSFET N-CHANNEL 30V 32A 8SOIC Vishay Siliconix |
7,500 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Tc) | 4.5V, 10V | 3.8mOhm @ 14A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5400 pF @ 15 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SQ4182EY-T1_BE3MOSFET N-CHANNEL 30V 32A 8SOIC Vishay Siliconix |
5,646 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Tc) | 4.5V, 10V | 3.8mOhm @ 14A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5400 pF @ 15 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SQ4184EY-T1_GE3MOSFET N-CH 40V 29A 8SOIC Vishay Siliconix |
4,533 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Tc) | 4.5V, 10V | 4.6mOhm @ 14A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5400 pF @ 20 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SQD30N05-20L_GE3MOSFET N-CH 55V 30A TO252AA Vishay Siliconix |
3,507 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | 18 nC @ 5 V | ±20V | 1175 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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IRF9Z24SPBFMOSFET P-CH 60V 11A D2PAK Vishay Siliconix |
3,327 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SI7623DN-T1-GE3MOSFET P-CH 20V 35A PPAK1212-8 Vishay Siliconix |
2,675 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 10V | 3.8mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | ±12V | 5460 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SQD50N04-5M6_T4GE3MOSFET N-CH 40V 50A TO252AA Vishay Siliconix |
42,117 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 5.6mOhm @ 20A, 10V | 3.5V @ 250µA | 85 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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IRFR9310PBFMOSFET P-CH 400V 1.8A DPAK Vishay Siliconix |
2,013 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRF820ASPBFMOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix |
733 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
