| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHD11N80AE-GE3MOSFET N-CH 800V 8A TO252AA Vishay Siliconix |
2,659 | - |
|
数据手册 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SIJ482DP-T1-GE3MOSFET N-CH 80V 60A PPAK SO-8 Vishay Siliconix |
2,482 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.7V @ 250µA | 71 nC @ 10 V | ±20V | 2425 pF @ 40 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF720SPBFMOSFET N-CH 400V 3.3A D2PAK Vishay Siliconix |
435 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFI9620GPBFMOSFET P-CH 200V 3A TO220-3 Vishay Siliconix |
5,361 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 340 pF @ 15 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SI7110DN-T1-E3MOSFET N-CH 20V 13.5A PPAK1212-8 Vishay Siliconix |
5,900 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21 nC @ 4.5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SI4430BDY-T1-E3MOSFET N-CH 30V 14A 8SO Vishay Siliconix |
1,590 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 3V @ 250µA | 36 nC @ 4.5 V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SIR880ADP-T1-GE3MOSFET N-CH 80V 60A PPAK SO-8 Vishay Siliconix |
5,720 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 6.3mOhm @ 20A, 10V | 3V @ 250µA | 72 nC @ 10 V | ±20V | 2289 pF @ 40 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFR9020TRPBFMOSFET P-CH 50V 9.9A DPAK Vishay Siliconix |
6,761 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
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SQJ174EP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
5,789 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 293A (Tc) | 10V | 2.9mOhm @ 15A, 10V | 3.5V @ 250µA | 81 nC @ 10 V | ±20V | 6111 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SIHD240N60E-GE3MOSFET N-CH 600V 12A DPAK Vishay Siliconix |
2,977 | - |
|
数据手册 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 783 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |

