| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJA78EP-T1_GE3MOSFET N-CH 80V 72A PPAK SO-8 Vishay Siliconix |
2,797 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 72A (Tc) | 10V | 5.3mOhm @ 10A, 10V | 3.3V @ 250µA | 95 nC @ 10 V | ±20V | 5100 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
IRF610SPBFMOSFET N-CH 200V 3.3A D2PAK Vishay Siliconix |
298 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF530STRRPBFMOSFET N-CH 100V 14A TO263 Vishay Siliconix |
197 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI7112DN-T1-GE3MOSFET N-CH 30V 11.3A PPAK1212-8 Vishay Siliconix |
10,268 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27 nC @ 4.5 V | ±12V | 2610 pF @ 15 V | - | 1.5W (Ta) | -50°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
IRFI620GPBFMOSFET N-CH 200V 4.1A TO220-3 Vishay Siliconix |
575 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.1A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SIRA02DP-T1-GE3MOSFET N-CH 30V 50A PPAK SO-8 Vishay Siliconix |
7,498 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 117 nC @ 10 V | +20V, -16V | 6150 pF @ 15 V | - | 5W (Ta), 71.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFR320PBFMOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
2,725 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
SIR158DP-T1-RE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
1,654 | - |
|
数据手册 |
TrenchFET® Gen III | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2.5V @ 250µA | 130 nC @ 10 V | ±20V | 4980 pF @ 15 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQJ850EP-T1_GE3MOSFET N-CH 60V 24A PPAK SO-8 Vishay Siliconix |
8,244 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V, 10V | 23mOhm @ 10.3A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1225 pF @ 30 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SIHD12N50E-GE3MOSFET N-CH 550V 10.5A DPAK Vishay Siliconix |
2,939 | - |
|
数据手册 |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 886 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TA) | - | - | Surface Mount | DPAK |

