场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM5P15FU,LF

SSM5P15FU,LF

MOSFET 2P-CH 30V 0.1A USV

Toshiba Semiconductor and Storage

2,998
SSM5P15FU,LF

数据手册

- 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 100mA (Ta) 12Ohm @ 10mA, 4V 1.7V @ 100µA - 9.1pF @ 3V 200mW (Ta) 150°C - - Surface Mount USV
SSM5N16FU,LF

SSM5N16FU,LF

MOSFET 2N-CH 20V 0.1A USV

Toshiba Semiconductor and Storage

2,995
SSM5N16FU,LF

数据手册

- 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 100mA (Ta) 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 200mW (Ta) 150°C - - Surface Mount USV
SSM6N48FU,LF

SSM6N48FU,LF

MOSFET 2N-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

2,710
SSM6N48FU,LF

数据手册

U-MOSIII 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA (Ta) 3.2Ohm @ 10mA, 4V 1.5V @ 100µA - 15.1pF @ 3V 300mW 150°C - - Surface Mount US6
SSM6N36FE,LM

SSM6N36FE,LM

MOSFET 2N-CH 20V 0.5A ES6

Toshiba Semiconductor and Storage

1,768
SSM6N36FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 500mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6P35AFU,LF

SSM6P35AFU,LF

MOSFET 2P-CH 20V 0.25A US6

Toshiba Semiconductor and Storage

5,990
SSM6P35AFU,LF

数据手册

U-MOSVII 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 250mA (Ta) 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 285mW (Ta) 150°C - - Surface Mount US6
SSM6N55NU,LF

SSM6N55NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

2,353
SSM6N55NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4A 46mOhm @ 4A, 10V 2.5V @ 100µA 2.5nC @ 4.5V 280pF @ 15V 1W 150°C (TJ) - - Surface Mount 6-µDFN (2x2)
SSM6N39TU,LF

SSM6N39TU,LF

MOSFET 2N-CH 20V 1.6A UF6

Toshiba Semiconductor and Storage

2,625
SSM6N39TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 1.6A (Ta) 119mOhm @ 1A, 4V 1V @ 1mA 7.5nC @ 4V 260pF @ 10V 500mW 150°C - - Surface Mount UF6
SSM6P47NU,LF

SSM6P47NU,LF

MOSFET 2P-CH 20V 4A 6DFN

Toshiba Semiconductor and Storage

1,903
SSM6P47NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4A 95mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6nC @ 4.5V 290pF @ 10V 1W 150°C (TJ) - - Surface Mount 6-µDFN (2x2)
SSM6N61NU,LF

SSM6N61NU,LF

MOSFET 2N-CH 20V 4A 6UDFNB

Toshiba Semiconductor and Storage

6,933
SSM6N61NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 4A 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6nC @ 4.5V 410pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFNB (2x2)
SSM6L807R,LF

SSM6L807R,LF

MOSFET N/P-CH 30V 4A 6TSOPF

Toshiba Semiconductor and Storage

6,000
SSM6L807R,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4A (Ta) 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2nC @ 4.5V, 6.74nC @ 4.5V 310pF @ 15V, 480pF @ 10V 1.4W (Ta) 150°C - - Surface Mount 6-TSOP-F
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