场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM6P56FE,LM

SSM6P56FE,LM

MOSFET 2P-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

2,704
SSM6P56FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel - 20V 800mA (Ta) 390mOhm @ 800mA, 4.5V 1V @ 1mA 1.6nC @ 4.5V 100pF @ 10V 150mW 150°C - - Surface Mount ES6
TPC8208(TE12L,Q,M)

TPC8208(TE12L,Q,M)

MOSFET 2N-CH 20V 5A 8SOP

Toshiba Semiconductor and Storage

3,942
TPC8208(TE12L,Q,M)

数据手册

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5A 50mOhm @ 2.5A, 4V 1.2V @ 200µA 9.5nC @ 5V 780pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
TPC8211(TE12L,Q,M)

TPC8211(TE12L,Q,M)

MOSFET 2N-CH 30V 5.5A 8SOP

Toshiba Semiconductor and Storage

7,727
TPC8211(TE12L,Q,M)

数据手册

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 36mOhm @ 3A, 10V 2.5V @ 1mA 25nC @ 10V 1250pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
SSM6N37FE,LM

SSM6N37FE,LM

MOSFET 2N-CH 20V 0.25A ES6

Toshiba Semiconductor and Storage

8,704
SSM6N37FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 250mA 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - 12pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
TPC8207(TE12L,Q)

TPC8207(TE12L,Q)

MOSFET 2N-CH 20V 6A 8SOP

Toshiba Semiconductor and Storage

9,508
TPC8207(TE12L,Q)

数据手册

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6A 20mOhm @ 4.8A, 4V 1.2V @ 200µA 22nC @ 5V 2010pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
SSM6N7002BFU(T5L,F

SSM6N7002BFU(T5L,F

MOSFET 2N-CH 60V 0.2A US6

Toshiba Semiconductor and Storage

2,982
SSM6N7002BFU(T5L,F

数据手册

- 6-TSSOP, SC-88, SOT-363 Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - 17pF @ 25V 300mW 150°C (TJ) - - Surface Mount US6
SSM6N7002BFU,LF

SSM6N7002BFU,LF

MOSFET 2N-CH 60V 0.2A US6

Toshiba Semiconductor and Storage

4,456
SSM6N7002BFU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - 17pF @ 25V 300mW 150°C (TJ) - - Surface Mount US6
SSM6L16FETE85LF

SSM6L16FETE85LF

MOSFET N/P-CH 20V 0.1A ES6

Toshiba Semiconductor and Storage

2,872
SSM6L16FETE85LF

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel - 20V 100mA 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 150mW 150°C (TA) - - Surface Mount ES6
SSM6N42FE(TE85L,F)

SSM6N42FE(TE85L,F)

MOSFET 2N-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

8,984
SSM6N42FE(TE85L,F)

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 800mA 240mOhm @ 500mA, 4.5V 1V @ 1mA 2nC @ 4.5V 90pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6P35FE(TE85L,F)

SSM6P35FE(TE85L,F)

MOSFET 2P-CH 20V 0.1A ES6

Toshiba Semiconductor and Storage

9,158
SSM6P35FE(TE85L,F)

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 100mA 8Ohm @ 50mA, 4V 1V @ 1mA - 12.2pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
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