场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM6N7002KFU,LF

SSM6N7002KFU,LF

MOSFET 2N-CH 60V 0.3A US6

Toshiba Semiconductor and Storage

239,024
SSM6N7002KFU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 300mA 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 40pF @ 10V 285mW 150°C (TJ) - - Surface Mount US6
SSM6L56FE,LM

SSM6L56FE,LM

MOSFET N/P-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

58,717
SSM6L56FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Ta) 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 10V 55pF @ 10V, 100pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
SSM6N37FU,LF

SSM6N37FU,LF

MOSFET 2N-CH 20V 0.25A US6

Toshiba Semiconductor and Storage

147,393
SSM6N37FU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 250mA (Ta) 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - 12pF @ 10V 300mW 150°C - - Surface Mount US6
SSM6L14FE(TE85L,F)

SSM6L14FE(TE85L,F)

MOSFET N/P-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

27,811
SSM6L14FE(TE85L,F)

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Ta), 720mA (Ta) 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V 1V @ 1mA 2nC @ 4.5V, 1.76nC @ 4.5V 90pF @ 10V, 110pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
SSM6L09FUTE85LF

SSM6L09FUTE85LF

MOSFET N/P-CH 30V 0.4A US6

Toshiba Semiconductor and Storage

27,660
SSM6L09FUTE85LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 400mA, 200mA 700mOhm @ 200MA, 10V 1.8V @ 100µA - 20pF @ 5V 300mW 150°C (TJ) - - Surface Mount US6
SSM6N58NU,LF

SSM6N58NU,LF

MOSFET 2N-CH 30V 4A 6UDFN

Toshiba Semiconductor and Storage

143,314
SSM6N58NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A 84mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V 1W 150°C (TJ) - - Surface Mount 6-UDFN (2x2)
SSM6N57NU,LF

SSM6N57NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

86,896
SSM6N57NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 4A 46mOhm @ 2A, 4.5V 1V @ 1mA 4nC @ 4.5V 310pF @ 10V 1W 150°C (TJ) - - Surface Mount 6-µDFN (2x2)
SSM6N7002CFU,LF

SSM6N7002CFU,LF

MOSFET 2N-CH 60V 0.17A US6

Toshiba Semiconductor and Storage

26,047
SSM6N7002CFU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 170mA 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35nC @ 4.5V 17pF @ 10V 285mW 150°C (TJ) - - Surface Mount US6
SSM6N15AFU,LF

SSM6N15AFU,LF

MOSFET 2N-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

23,544
SSM6N15AFU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 3.6Ohm @ 10mA, 4V 1.5V @ 100µA - 13.5pF @ 3V 300mW 150°C (TJ) - - Surface Mount US6
SSM6P15FU,LF

SSM6P15FU,LF

MOSFET 2P-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

30,950
SSM6P15FU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 100mA 12Ohm @ 10mA, 4V 1.7V @ 100µA - 9.1pF @ 3V 200mW (Ta) 150°C - - Surface Mount US6
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