场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM6L40TU,LF

SSM6L40TU,LF

MOSFET N/P-CH 30V 1.6A UF6

Toshiba Semiconductor and Storage

112,270
SSM6L40TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4V Drive 30V 1.6A (Ta), 1.4A (Ta) 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V 2.6V @ 1mA, 2V @ 1mA 5.1nC @ 10V, 2.9nC @ 10V 180pF @ 15V, 120pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
SSM6L39TU,LF

SSM6L39TU,LF

MOSFET N/P-CH 20V 0.8A UF6

Toshiba Semiconductor and Storage

3,031
SSM6L39TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.8V Drive 20V 800mA 143mOhm @ 600MA, 4V 1V @ 1mA - 268pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
SSM6N67NU,LF

SSM6N67NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

18,284
SSM6N67NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A (Ta) 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2nC @ 4.5V 310pF @ 15V 2W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
SSM6N357R,LF

SSM6N357R,LF

MOSFET 2N-CH 60V 0.65A 6TSOPF

Toshiba Semiconductor and Storage

10,059
SSM6N357R,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 650mA (Ta) 1.8Ohm @ 150mA, 5V 2V @ 1mA 1.5nC @ 5V 60pF @ 12V 1.5W (Ta) 150°C - - Surface Mount 6-TSOP-F
SSM6N62TU,LF

SSM6N62TU,LF

MOSFET 2N-CH 20V 0.8A UF6

Toshiba Semiconductor and Storage

15,023
SSM6N62TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 800mA (Ta) 85mOhm @ 800mA, 4.5V 1V @ 1mA 2nC @ 4.5V 177pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
SSM6N815R,LF

SSM6N815R,LF

MOSFET 2N-CH 100V 2A 6TSOPF

Toshiba Semiconductor and Storage

22,603
SSM6N815R,LF

数据手册

U-MOSVIII-H 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 100V 2A (Ta) 103mOhm @ 2A, 10V 2.5V @ 100µA 3.1nC @ 4.5V 290pF @ 15V 1.8W (Ta) 150°C - - Surface Mount 6-TSOP-F
SSM6L61NU,LF

SSM6L61NU,LF

MOSFET N/P-CH 20V 4A 6UDFN

Toshiba Semiconductor and Storage

6,041
SSM6L61NU,LF

数据手册

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 20V 4A - - - - - - - - Surface Mount 6-UDFN (2x2)
SSM6P816R,LF

SSM6P816R,LF

MOSFET 2P-CH 20V 6A 6TSOPF

Toshiba Semiconductor and Storage

6,793
SSM6P816R,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.8V Drive 20V 6A (Ta) 30.1mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.4W (Ta) 150°C - - Surface Mount 6-TSOP-F
SSM6N813R,LF

SSM6N813R,LF

MOSFET 2N-CH 100V 3.5A 6TSOPF

Toshiba Semiconductor and Storage

3,822
SSM6N813R,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 3.5A (Ta) 112mOhm @ 3.5A, 10V 2.5V @ 100µA 3.6nC @ 4.5V 242pF @ 15V 1.5W (Ta) 175°C Automotive AEC-Q101 Surface Mount 6-TSOP-F
TPC8408,LQ(S

TPC8408,LQ(S

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

Toshiba Semiconductor and Storage

2,387
TPC8408,LQ(S

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 40V 6.1A, 5.3A 32mOhm @ 3.1A, 10V 2.3V @ 100µA 24nC @ 10V 850pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP
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