场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM6N35AFE,LF

SSM6N35AFE,LF

MOSFET 2N-CH 20V 0.25A ES6

Toshiba Semiconductor and Storage

63,479
SSM6N35AFE,LF

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 250mA (Ta) 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34nC @ 4.5V 36pF @ 10V 250mW 150°C - - Surface Mount ES6
SSM6P35AFE,LF

SSM6P35AFE,LF

MOSFET 2P-CH 20V 0.25A ES6

Toshiba Semiconductor and Storage

6,009
SSM6P35AFE,LF

数据手册

U-MOSVII SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 250mA (Ta) 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
SSM6N44FE,LM

SSM6N44FE,LM

MOSFET 2N-CH 30V 0.1A ES6

Toshiba Semiconductor and Storage

135,240
SSM6N44FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 4Ohm @ 10mA, 4V 1.5V @ 100µA - 8.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6L36FE,LM

SSM6L36FE,LM

MOSFET N/P-CH 20V 0.5A ES6

Toshiba Semiconductor and Storage

39,399
SSM6L36FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 500mA, 330mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N43FU,LF

SSM6N43FU,LF

MOSFET 2N-CH 20V 0.5A US6

Toshiba Semiconductor and Storage

8,860
SSM6N43FU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 500mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 200mW 150°C (TJ) - - Surface Mount US6
SSM6N56FE,LM

SSM6N56FE,LM

MOSFET 2N-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

34,922
SSM6N56FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 800mA 235mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N17FU(TE85L,F)

SSM6N17FU(TE85L,F)

MOSFET 2N-CH 50V 0.1A US6

Toshiba Semiconductor and Storage

1,027
SSM6N17FU(TE85L,F)

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 100mA (Ta) 20Ohm @ 10mA, 4V 1.5V @ 1µA - 7pF @ 3V 200mW (Ta) 150°C - - Surface Mount US6
SSM6L35FU(TE85L,F)

SSM6L35FU(TE85L,F)

MOSFET N/P-CH 20V 0.18A US6

Toshiba Semiconductor and Storage

2,876
SSM6L35FU(TE85L,F)

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.2V Drive 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 200mW -55°C ~ 150°C (TJ) - - Surface Mount US6
SSM6P15FE(TE85L,F)

SSM6P15FE(TE85L,F)

MOSFET 2P-CH 30V 0.1A ES6

Toshiba Semiconductor and Storage

14,890
SSM6P15FE(TE85L,F)

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 100mA 12Ohm @ 10mA, 4V 1.7V @ 100µA - 9.1pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N40TU,LF

SSM6N40TU,LF

MOSFET 2N-CH 30V 1.6A UF6

Toshiba Semiconductor and Storage

7,754
SSM6N40TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 1.6A (Ta) 122mOhm @ 1A, 10V 2.6V @ 1mA 5.1nC @ 10V 180pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
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