场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
TPC8223-H,LQ(S

TPC8223-H,LQ(S

MOSFET 2N-CH 30V 9A 8SOP

Toshiba Semiconductor and Storage

8,140
TPC8223-H,LQ(S

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9A 17mOhm @ 4.5A, 10V 2.3V @ 100µA 17nC @ 10V 1190pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP
TPC8407,LQ(S

TPC8407,LQ(S

MOSFET N/P-CH 30V 9A/7.4A 8SOP

Toshiba Semiconductor and Storage

6,023
TPC8407,LQ(S

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 9A, 7.4A 17mOhm @ 4.5A, 10V 2.3V @ 100µA 17nC @ 10V 1190pF @ 10V 450mW 150°C (TJ) - - Surface Mount 8-SOP
TPCL4201(TE85L,F)

TPCL4201(TE85L,F)

MOSFET 2N-CH 4CHIP LGA

Toshiba Semiconductor and Storage

3,695
TPCL4201(TE85L,F)

数据手册

- 4-XFLGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - - - - 1.2V @ 200µA - 720pF @ 10V 500mW 150°C (TJ) - - Surface Mount 4-Chip LGA (1.59x1.59)
TPCL4202(TE85L,F)

TPCL4202(TE85L,F)

MOSFET 2N-CH 4CHIP LGA

Toshiba Semiconductor and Storage

6,406
TPCL4202(TE85L,F)

数据手册

- 4-XFLGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - - - - 1.2V @ 200µA - 780pF @ 10V 500mW 150°C (TJ) - - Surface Mount 4-Chip LGA (1.59x1.59)
TPCL4203(TE85L,F)

TPCL4203(TE85L,F)

MOSFET 2N-CH 4CHIP LGA

Toshiba Semiconductor and Storage

2,944
TPCL4203(TE85L,F)

数据手册

- 4-XFLGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - - - - 1.2V @ 200µA - 685pF @ 10V 500mW 150°C (TJ) - - Surface Mount 4-Chip LGA (1.59x1.59)
SSM6L11TU(TE85L,F)

SSM6L11TU(TE85L,F)

MOSFET N/P-CH 20V 0.5A UF6

Toshiba Semiconductor and Storage

6,193
SSM6L11TU(TE85L,F)

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 500mA 145mOhm @ 250MA, 4V 1.1V @ 100µA - 268pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
SSM6N48FU,RF(D

SSM6N48FU,RF(D

MOSFET 2N-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

5,923
SSM6N48FU,RF(D

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 2.5V Drive 30V 100mA (Ta) 3.2Ohm @ 10mA, 4V 1.5V @ 100µA - 15.1pF @ 3V 300mW -55°C ~ 150°C (TJ) - - Surface Mount US6
SSM6L13TU(T5L,F,T)

SSM6L13TU(T5L,F,T)

MOSFET N/P-CH 20V 0.8A UF6

Toshiba Semiconductor and Storage

9,185
SSM6L13TU(T5L,F,T)

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.8V Drive 20V 800mA (Ta) 143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V 1V @ 1mA - 268pF @ 10V, 250pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
TPC8228-H,LQ

TPC8228-H,LQ

MOSFET 2N-CH 60V 3.8A 8SOP

Toshiba Semiconductor and Storage

6,873
TPC8228-H,LQ

数据手册

U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.8A 57mOhm @ 1.9A, 10V 2.3V @ 100µA 11nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
TPC8227-H,LQ

TPC8227-H,LQ

MOSFET 2N-CH 40V 5.1A 8SOP

Toshiba Semiconductor and Storage

5,861
TPC8227-H,LQ

数据手册

U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5.1A 33mOhm @ 2.6A, 10V 2.3V @ 100µA 10nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
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