场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM6N813R,LXHF

SSM6N813R,LXHF

MOSFET 2N-CH 100V 3.5A 6TSOPF

Toshiba Semiconductor and Storage

2,963
SSM6N813R,LXHF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 100V 3.5A (Ta) 112mOhm @ 3.5A, 10V 2.5V @ 100µA 3.6nC @ 4.5V 242pF @ 15V 1.5W (Ta) 175°C Automotive AEC-Q101 Surface Mount 6-TSOP-F
SSM6N44FU,LF

SSM6N44FU,LF

MOSFET 2N-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

14,091
SSM6N44FU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA (Ta) 4Ohm @ 10mA, 4V 1.5V @ 100µA - 8.5pF @ 3V 200mW (Ta) 150°C - - Surface Mount US6
SSM6N16FE,L3F

SSM6N16FE,L3F

MOSFET 2N-CH 20V 0.1A ES6

Toshiba Semiconductor and Storage

7,626
SSM6N16FE,L3F

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 100mA (Ta) 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 150mW (Ta) 150°C - - Surface Mount ES6
SSM6L35FE,LM

SSM6L35FE,LM

MOSFET N/P-CH 20V 0.18A ES6

Toshiba Semiconductor and Storage

18,559
SSM6L35FE,LM

数据手册

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 180mA, 100mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
SSM6N7002KFU,LXH

SSM6N7002KFU,LXH

MOSFET 2N-CH 60V 0.3A US6

Toshiba Semiconductor and Storage

10,569
SSM6N7002KFU,LXH

数据手册

U-MOSVII-H 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 300mA (Ta) 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 40pF @ 10V 285mW (Ta) 150°C Automotive AEC-Q101 Surface Mount US6
SSM6N16FUTE85LF

SSM6N16FUTE85LF

MOSFET 2N-CH 20V 0.1A US6

Toshiba Semiconductor and Storage

8,030
SSM6N16FUTE85LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 100mA 3Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 200mW 150°C (TJ) - - Surface Mount US6
SSM6N35AFU,LF

SSM6N35AFU,LF

MOSFET 2N-CH 20V 0.25A US6

Toshiba Semiconductor and Storage

3,325
SSM6N35AFU,LF

数据手册

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 250mA (Ta) 1.1Ohm @ 150mA, 4.5V 1V @ 100µA 0.34nC @ 4.5V 36pF @ 10V 285mW (Ta) 150°C - - Surface Mount US6
SSM6L36TU,LF

SSM6L36TU,LF

MOSFET N/P-CH 20V 0.5A UF6

Toshiba Semiconductor and Storage

8,890
SSM6L36TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 500mA (Ta), 330mA (Ta) 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.23nC @ 4V, 1.2nC @ 4V 46pF @ 10V, 43pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
SSM6N36TU,LF

SSM6N36TU,LF

MOSFET 2N-CH 20V 0.5A UF6

Toshiba Semiconductor and Storage

8,256
SSM6N36TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 500mA (Ta) 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V 46pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
SSM6P36TU,LF

SSM6P36TU,LF

MOSFET 2P-CH 20V 0.33A UF6

Toshiba Semiconductor and Storage

6,466
SSM6P36TU,LF

数据手册

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 330mA (Ta) 1.31Ohm @ 100mA, 4.5V 1V @ 1mA 1.2nC @ 4V 43pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
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