| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6N813R,LXHFMOSFET 2N-CH 100V 3.5A 6TSOPF Toshiba Semiconductor and Storage |
2,963 |
|
数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 100V | 3.5A (Ta) | 112mOhm @ 3.5A, 10V | 2.5V @ 100µA | 3.6nC @ 4.5V | 242pF @ 15V | 1.5W (Ta) | 175°C | Automotive | AEC-Q101 | Surface Mount | 6-TSOP-F |
|
SSM6N44FU,LFMOSFET 2N-CH 30V 0.1A US6 Toshiba Semiconductor and Storage |
14,091 |
|
数据手册 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 200mW (Ta) | 150°C | - | - | Surface Mount | US6 |
|
SSM6N16FE,L3FMOSFET 2N-CH 20V 0.1A ES6 Toshiba Semiconductor and Storage |
7,626 |
|
数据手册 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 150mW (Ta) | 150°C | - | - | Surface Mount | ES6 |
|
SSM6L35FE,LMMOSFET N/P-CH 20V 0.18A ES6 Toshiba Semiconductor and Storage |
18,559 |
|
数据手册 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 150mW | 150°C (TJ) | - | - | Surface Mount | ES6 |
|
SSM6N7002KFU,LXHMOSFET 2N-CH 60V 0.3A US6 Toshiba Semiconductor and Storage |
10,569 |
|
数据手册 |
U-MOSVII-H | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 300mA (Ta) | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 285mW (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | US6 |
|
SSM6N16FUTE85LFMOSFET 2N-CH 20V 0.1A US6 Toshiba Semiconductor and Storage |
8,030 |
|
数据手册 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 200mW | 150°C (TJ) | - | - | Surface Mount | US6 |
|
SSM6N35AFU,LFMOSFET 2N-CH 20V 0.25A US6 Toshiba Semiconductor and Storage |
3,325 |
|
数据手册 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 285mW (Ta) | 150°C | - | - | Surface Mount | US6 |
|
SSM6L36TU,LFMOSFET N/P-CH 20V 0.5A UF6 Toshiba Semiconductor and Storage |
8,890 |
|
数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta), 330mA (Ta) | 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.23nC @ 4V, 1.2nC @ 4V | 46pF @ 10V, 43pF @ 10V | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
|
SSM6N36TU,LFMOSFET 2N-CH 20V 0.5A UF6 Toshiba Semiconductor and Storage |
8,256 |
|
数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta) | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
|
SSM6P36TU,LFMOSFET 2P-CH 20V 0.33A UF6 Toshiba Semiconductor and Storage |
6,466 |
|
数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 330mA (Ta) | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |