电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIS126DN-T1-GE3MOSFET N-CH 80V 12A/45.1A PPAK Vishay Siliconix |
5,669 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Ta), 45.1A (Tc) | 7.5V, 10V | 10.2mOhm @ 10A, 10V | 3.5V @ 250µA | 32 nC @ 10 V | ±20V | 1402 pF @ 40 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SISS10ADN-T1-GE3MOSFET N-CH 40V 31.7A/109A PPAK Vishay Siliconix |
17,057 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 31.7A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61 nC @ 10 V | +20V, -16V | 3030 pF @ 20 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SUD23N06-31-GE3MOSFET N-CH 60V 21.4A TO252 Vishay Siliconix |
7,246 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SQJ144EP-T1_GE3MOSFET N-CH 40V 130A PPAK SO-8 Vishay Siliconix |
4,233 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 10V | 4.6mOhm @ 15A, 10V | 3.5V @ 250µA | 36 nC @ 10 V | ±20V | 1960 pF @ 25 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJ474EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix |
18,000 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Tc) | 4.5V, 10V | 30mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJ416EP-T1_GE3MOSFET N-CH 100V 27A PPAK SO-8 Vishay Siliconix |
12,685 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Tc) | 10V | 30mOhm @ 10A, 10V | 3.5V @ 250µA | 20 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJ416EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix |
12,000 | - |
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数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Tc) | 10V | 30mOhm @ 10A, 10V | 3.5V @ 250µA | 20 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJ457EP-T2_GE3P-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix |
12,701 | - |
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数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Tc) | 4.5V, 10V | 25mOhm @ 10A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR122DP-T1-RE3MOSFET N-CH 80V 16.7A/59.6A PPAK Vishay Siliconix |
12,205 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16.7A (Ta), 59.6A (Tc) | 7.5V, 10V | 7.4mOhm @ 10A, 10V | 3.8V @ 250µA | 44 nC @ 10 V | ±20V | 1950 pF @ 40 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SI4850BDY-T1-GE3MOSFET N-CH 60V 8.4A/11.3A 8SO Vishay Siliconix |
7,297 | - |
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数据手册 |
TrenchFET® Gen IV | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8.4A (Ta), 11.3A (Tc) | 4.5V, 10V | 19.5mOhm @ 10A, 10V | 2.8V @ 250µA | 17 nC @ 10 V | ±20V | 790 pF @ 30 V | - | 2.5W (Ta), 4.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
