上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJA37EP-T1_GE3MOSFET P-CH 30V 30A PPAK SO-8 Vishay Siliconix |
3,327 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 9.2mOhm @ 6A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 4900 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQS164ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
1,937 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8SLW | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 82A (Tc) | 4.5V, 10V | 7.4mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 2159 pF @ 25 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
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SQS482EN-T1_GE3MOSFET N-CH 30V 16A PPAK1212-8 Vishay Siliconix |
3,822 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.4A, 10V | 2.5V @ 250µA | 39 nC @ 10 V | ±20V | 1865 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIRA64DP-T1-RE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
8,826 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 10A, 10V | 2.2V @ 250µA | 65 nC @ 10 V | +20V, -16V | 3420 pF @ 15 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQ3418AEEV-T1_BE3MOSFET N-CH 40V 8A 6TSOP Vishay Siliconix |
948 | - |
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数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Tc) | 4.5V, 10V | 32mOhm @ 5A, 10V | 2.5V @ 250µA | 12.4 nC @ 10 V | ±20V | 675 pF @ 20 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 6-TSOP |
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SIS4604LDN-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
13,827 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15.1A (Ta), 45.9A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1180 pF @ 30 V | - | 3.6W (Ta), 33.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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IRFR220TRLPBFMOSFET N-CH 200V 4.8A DPAK Vishay Siliconix |
5,415 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SQD15N06-42L_T4GE3N-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix |
7,458 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 4.5V, 10V | 42mOhm @ 10A, 10V | 2.5V @ 250µA | 15 nC @ 10 V | ±20V | 535 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SI6423ADQ-T1-GE3MOSFET PCH 20V 10.3/12.5A 8TSSOP Vishay Siliconix |
5,865 | - |
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数据手册 |
TrenchFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10.3A (Ta), 12.5A (Tc) | - | 9.8mOhm @ 10A, 4.5V | 1V @ 250µA | 168 nC @ 8 V | ±8V | 5875 pF @ 10 V | - | 1.5W (Ta), 2.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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SISH402DN-T1-GE3MOSFET N-CH 30V 19A/35A PPAK Vishay Siliconix |
5,695 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 35A (Tc) | 4.5V, 10V | 6mOhm @ 19A, 10V | 2.2V @ 250µA | 42 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
