上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SISS10DN-T1-GE3MOSFET N-CH 40V 60A PPAK 1212-8S Vishay Siliconix |
2,764 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 75 nC @ 10 V | +20V, -16V | 3750 pF @ 20 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SQS407ENW-T1_GE3MOSFET P-CH 30V 16A PPAK1212-8W Vishay Siliconix |
27,453 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8W | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 10.8mOhm @ 12A, 10V | 2.5V @ 250µA | 77 nC @ 10 V | ±20V | 4572 pF @ 20 V | - | 62.5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 1212-8W |
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SQ4431EY-T1_GE3MOSFET P-CH 30V 10.8A 8SO Vishay Siliconix |
6,312 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.8A (Tc) | 10V | 30mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1265 pF @ 15 V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SQS160ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
5,221 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8SLW | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 141A (Tc) | 4.5V, 10V | 4.3mOhm @ 10A, 10V | 2.5V @ 250µA | 71 nC @ 10 V | ±20V | 3866 pF @ 25 V | - | 113W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
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SQS850EN-T1_GE3MOSFET N-CH 60V 12A PPAK1212-8 Vishay Siliconix |
4,806 | - |
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数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 21.5mOhm @ 6.1A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 2021 pF @ 30 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SQD15N06-42L_GE3MOSFET N-CH 60V 15A TO252 Vishay Siliconix |
1,570 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 4.5V, 10V | 42mOhm @ 10A, 10V | 2.5V @ 250µA | 15 nC @ 10 V | ±20V | 535 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SISA10DN-T1-GE3MOSFET N-CH 30V 30A PPAK1212-8 Vishay Siliconix |
8,802 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 3.7mOhm @ 10A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | +20V, -16V | 2425 pF @ 15 V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SQ4850CEY-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
7,121 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 22mOhm @ 6A, 10V | 2.5V @ 250µA | 34 nC @ 10 V | ±20V | 1375 pF @ 25 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SI5403DC-T1-GE3MOSFET P-CH 30V 6A 1206-8 Vishay Siliconix |
3,609 | - |
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数据手册 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Tc) | 4.5V, 10V | 30mOhm @ 7.2A, 10V | 3V @ 250µA | 42 nC @ 10 V | ±20V | 1340 pF @ 15 V | - | 2.5W (Ta), 6.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 1206-8 ChipFET™ |
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SQ4064EY-T1_GE3MOSFET N-CHANNEL 60V 12A 8SOIC Vishay Siliconix |
7,960 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 19.8mOhm @ 6.1A, 10V | 2.5V @ 250µA | 43 nC @ 10 V | ±20V | 2096 pF @ 25 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
