| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V961-0007-E3MOSFET N-CH TO-247AC Vishay Siliconix |
7,624 | - |
|
数据手册 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIRA90ADP-T1-GE3MOSFET N-CH 30V 71A/334A PPAK Vishay Siliconix |
5,519 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Cut Tape (CT) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 71A (Ta), 334A (Tc) | - | 0.78mOhm @ 20A, 10V | 2.2V @ 250µA | 195 nC @ 10 V | +20V, -16V | 9120 pF @ 15 V | - | 6.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SI7615BDN-T1-GE3MOSFET P-CH 20V 29A/104A PPAK Vishay Siliconix |
5,226 | - |
|
数据手册 |
- | PowerPAK® 1212-8 | Digi-Reel® | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 20 V | 29A (Ta), 104A (Tc) | - | 3.8mOhm @ 20A, 10V | 1.5V @ 250µA | 155 nC @ 10 V | ±12V | 4890 pF @ 10 V | - | 5.2W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SQ3419CEV-T1_GE3MOSFET P-CH 40V 6.9A 6TSOP Vishay Siliconix |
8,438 | - |
|
数据手册 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 6.9A (Tc) | 4.5V, 10V | 58mOhm @ 2.5A, 10V | 2.5V @ 250µA | 11.3 nC @ 4.5 V | ±20V | 990 pF @ 20 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 6-TSOP |
|
SQ2361CES-T1_GE3MOSFET P-CH 60V 2.8A SOT23-3 Vishay Siliconix |
6,325 | - |
|
数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.8A (Tc) | 4.5V, 10V | 177mOhm @ 2.4A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 550 pF @ 30 V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SQ2318CES-T1_GE3MOSFET N-CH 40V 8A SOT23-3 Vishay Siliconix |
7,114 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 7A (Tc) | 4.5V, 10V | 31mOhm @ 7.9A, 10V | 2.5V @ 250µA | 13 nC @ 10 V | ±20V | 553 pF @ 20 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
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SQ2362CES-T1_GE3MOSFET N-CH 60V 4.3A SOT23-3 Vishay Siliconix |
9,796 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.3A (Tc) | 4.5V, 10V | 68mOhm @ 2.4A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 550 pF @ 30 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
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SQ3425CEV-T1_GE3MOSFET P-CH 20V 7.4A 6-TSOP Vishay Siliconix |
9,635 | - |
|
数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.4A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 10.3 nC @ 4.5 V | ±12V | 840 pF @ 10 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 6-TSOP |
|
SQ3426CEEV-T1_GE3MOSFET N-CH 60V 7A 6TSOP Vishay Siliconix |
8,789 | - |
|
数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Tc) | 4.5V, 10V | 42mOhm @ 5A, 10V | 2.5V @ 250µA | 19.5 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 6-TSOP |
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SIHFU024-GE3LOGIC MOSFET N-CHANNEL 60V Vishay Siliconix |
7,731 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |

