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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFZ48RMOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
4,797 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF740ALMOSFET N-CH 400V 10A I2PAK Vishay Siliconix |
8,882 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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IRF640STRLMOSFET N-CH 200V 18A D2PAK Vishay Siliconix |
4,018 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF640STRRMOSFET N-CH 200V 18A D2PAK Vishay Siliconix |
7,443 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF740ASTRLMOSFET N-CH 400V 10A D2PAK Vishay Siliconix |
7,162 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF740ASTRRMOSFET N-CH 400V 10A D2PAK Vishay Siliconix |
3,481 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRL540STRLMOSFET N-CH 100V 28A D2PAK Vishay Siliconix |
9,920 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHG33N60E-E3MOSFET N-CH 600V 33A TO247AC Vishay Siliconix |
8,648 | - |
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数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRF840ALMOSFET N-CH 500V 8A I2PAK Vishay Siliconix |
8,230 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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IRF9Z34SMOSFET P-CH 60V 18A D2PAK Vishay Siliconix |
4,807 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
