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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF9630STRLMOSFET P-CH 200V 6.5A D2PAK Vishay Siliconix |
5,530 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFIZ44GMOSFET N-CH 60V 30A TO220-3 Vishay Siliconix |
9,283 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 28mOhm @ 18A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
SI4876DY-T1-E3MOSFET N-CH 20V 14A 8SO Vishay Siliconix |
7,865 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 14A (Ta) | 2.5V, 4.5V | 5mOhm @ 21A, 4.5V | 600mV @ 250µA (Min) | 80 nC @ 4.5 V | ±12V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SI7802DN-T1-E3MOSFET N-CH 250V 1.24A PPAK Vishay Siliconix |
7,065 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 1.24A (Ta) | 6V, 10V | 435mOhm @ 1.95A, 10V | 3.6V @ 250µA | 21 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SUM18N25-165-E3MOSFET N-CH 250V 18A TO263 Vishay Siliconix |
9,732 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 18A (Tc) | 10V | 165mOhm @ 14A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 1950 pF @ 25 V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM33N20-60P-E3MOSFET N-CH 200V 33A TO263 Vishay Siliconix |
9,467 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 33A (Tc) | 10V, 15V | 59mOhm @ 20A, 15V | 4.5V @ 250µA | 113 nC @ 15 V | ±25V | 2735 pF @ 25 V | - | 3.12W (Ta), 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SI4108DY-T1-GE3MOSFET N-CH 75V 20.5A 8-SOIC Vishay Siliconix |
2,285 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 20.5A (Tc) | - | 9.8mOhm @ 13.8A, 10V | 4V @ 250µA | 54 nC @ 10 V | - | 2100 pF @ 38 V | - | - | - | - | - | Surface Mount | 8-SOIC |
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SUD50N10-18P-GE3MOSFET N-CH 100V 8.2A/50A TO252 Vishay Siliconix |
9,015 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.2A (Ta), 50A (Tc) | 10V | 18.5mOhm @ 15A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 3W (Ta), 136.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SIHF28N60EF-GE3MOSFET N-CH 600V 28A TO220 Vishay Siliconix |
5,923 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SQ4401EY-T1_BE3MOSFET P-CH 40V 17.3A 8SOIC Vishay Siliconix |
2,805 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 17.3A (Tc) | 4.5V, 10V | 14mOhm @ 10.5A, 10V | 2.5V @ 250µA | 115 nC @ 10 V | ±20V | 4250 pF @ 20 V | - | 7.14W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
