| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SUM23N15-73-E3MOSFET N-CH 150V 23A TO263 Vishay Siliconix |
4,203 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 23A (Tc) | 6V, 10V | 73mOhm @ 15A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 1290 pF @ 25 V | - | 3.75W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI7483ADP-T1-GE3MOSFET P-CH 30V 14A PPAK SO-8 Vishay Siliconix |
3,511 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 5.7mOhm @ 24A, 10V | 3V @ 250µA | 180 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHP30N60AEL-GE3MOSFET N-CH 600V 28A TO220AB Vishay Siliconix |
6,623 | - |
|
数据手册 |
EL | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 120mOhm @ 15A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2565 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SI7459DP-T1-E3MOSFET P-CH 30V 13A PPAK SO-8 Vishay Siliconix |
9,117 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 10V | 6.8mOhm @ 22A, 10V | 3V @ 250µA | 170 nC @ 10 V | ±25V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SUM40N15-38-E3MOSFET N-CH 150V 40A TO263 Vishay Siliconix |
5,762 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 40A (Tc) | 6V, 10V | 38mOhm @ 15A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 3.75W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI7459DP-T1-GE3MOSFET P-CH 30V 13A PPAK SO-8 Vishay Siliconix |
7,461 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 10V | 6.8mOhm @ 22A, 10V | 3V @ 250µA | 170 nC @ 10 V | ±25V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR892DP-T1-GE3MOSFET N-CH 25V 50A PPAK SO-8 Vishay Siliconix |
5,023 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 3.2mOhm @ 10A, 10V | 2.6V @ 250µA | 60 nC @ 10 V | ±20V | 2645 pF @ 10 V | - | 5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SIHP35N60E-GE3MOSFET N-CH 600V 32A TO220AB Vishay Siliconix |
9,889 | - |
|
数据手册 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHB30N60E-E3MOSFET N-CH 600V 29A D2PAK Vishay Siliconix |
8,811 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF840SMOSFET N-CH 500V 8A D2PAK Vishay Siliconix |
5,546 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

