| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI7114DN-T1-GE3MOSFET N-CH 30V 11.7A PPAK1212-8 Vishay Siliconix |
7,774 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.7A (Ta) | 4.5V, 10V | 7.5mOhm @ 18.3A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SIHG21N65EF-GE3MOSFET N-CH 650V 21A TO247AC Vishay Siliconix |
5,390 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106 nC @ 10 V | ±30V | 2322 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SI7462DP-T1-E3MOSFET N-CH 200V 2.6A PPAK SO-8 Vishay Siliconix |
4,759 | - |
|
数据手册 |
- | PowerPAK® SO-8 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Ta) | - | 130mOhm @ 4.1A, 10V | 4V @ 250µA | 30 nC @ 10 V | - | - | - | - | - | - | - | Surface Mount | PowerPAK® SO-8 |
|
SI4634DY-T1-GE3MOSFET N-CH 30V 24.5A 8SO Vishay Siliconix |
5,798 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24.5A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.6V @ 250µA | 68 nC @ 10 V | ±20V | 3150 pF @ 15 V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI7366DP-T1-GE3MOSFET N-CH 20V 13A PPAK SO-8 Vishay Siliconix |
2,546 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 13A (Ta) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 3V @ 250µA | 25 nC @ 4.5 V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SUD50N02-09P-E3MOSFET N-CH 20V TO252 Vishay Siliconix |
5,045 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 3V @ 250µA | 16 nC @ 4.5 V | ±20V | 1300 pF @ 10 V | - | 6.5W (Ta), 39.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRF9530SMOSFET P-CH 100V 12A D2PAK Vishay Siliconix |
3,949 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF9530STRLMOSFET P-CH 100V 12A D2PAK Vishay Siliconix |
3,771 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRL630SMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
5,009 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRL630STRLMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
3,733 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

