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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFI9520GMOSFET P-CH 100V 5.2A TO220-3 Vishay Siliconix |
3,917 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 5.2A (Tc) | 10V | 600mOhm @ 3.1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRFUC20MOSFET N-CH 600V 2A TO251AA Vishay Siliconix |
9,763 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
IRFBF20LMOSFET N-CH 900V 1.7A I2PAK Vishay Siliconix |
3,063 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRF740LMOSFET N-CH 400V 10A TO220AB Vishay Siliconix |
8,027 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220AB |
|
SI7866ADP-T1-E3MOSFET N-CH 20V 40A PPAK SO-8 Vishay Siliconix |
4,262 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 40A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.2V @ 250µA | 125 nC @ 10 V | ±20V | 5415 pF @ 10 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQD50N04-5M6_GE3MOSFET N-CH 40V 50A TO252AA Vishay Siliconix |
5,368 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 5.6mOhm @ 20A, 10V | 3.5V @ 250µA | 85 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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IRFBC40AMOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix |
3,417 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHP28N65E-GE3MOSFET N-CH 650V 29A TO220AB Vishay Siliconix |
7,050 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 112mOhm @ 14A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±30V | 3405 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SI4322DY-T1-E3MOSFET N-CH 30V 18A 8SO Vishay Siliconix |
8,513 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 3V @ 250µA | 38 nC @ 10 V | ±20V | 1640 pF @ 15 V | - | 3.1W (Ta), 5.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SI4840DY-T1-E3MOSFET N-CH 40V 10A 8SO Vishay Siliconix |
8,768 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | 3V @ 250µA | 28 nC @ 5 V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
